论文信息 - Breakdown voltage walkout effect in ESD protection devices

Breakdown voltage walkout effect in ESD protection devices

Using experimental and numerical simulation analysis the breakdown voltage walkout effect has been studied in 40 V ESD protection devices based on extended drain MOS devices implemented in a 5 V CMOS process. A similar effect has been observed in 100 V and 24 V BiCMOS processes. The physical mechanism of this effect is revealed as the result of hot electron capture in the thick field oxide of the extended drain region. To address this, a method to reduce the walkout effect in high voltage ESD devices is proposed and experimentally validated.

V. A. Vashchenko | D. J. LaFonteese | K. G. Korablev

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