A 900 MHz LNA with balanced output and 12.5-dB/mW figure-of-merit (FoM) is presented. The architecture exploits the benefits of both inductive degeneration and noise cancellation which helps in achieving the optimum noise figure (NF). The LNA has a wideband gain and input matching is achieved using an off-chip inductor. Inductive degeneration and quality factor (Q) of the input matching network improves the NF of the LNA (with wideband gain) at a spot frequency. The transconductance of the core-LNA is fixed by a constant-gm circuit. Simulation results show that the LNA has a minimum NF of 1.25 dB at 900 MHz, transmission gain (S21) of 33 dB, S11 of −19 dB at 900 MHz, IIP2 of +2 dBm, and IIP3 of −15 dBm. The LNA, designed in 180 nm CMOS, consumes 4.4 mA from a 1.8 V supply and has a negligible differential-gain error of 0.138 dB, at the input matched frequency. A 2.5-dB NF balanced passive mixer on top of the LNA is also implemented.
[1]
B. Nauta,et al.
Wideband Balun-LNA With Simultaneous Output Balancing, Noise-Canceling and Distortion-Canceling
,
2008,
IEEE Journal of Solid-State Circuits.
[2]
P. De Vita,et al.
A sub-1-dB NF±2.3-kV ESD-protected 900-MHz CMOS LNA
,
2001,
IEEE J. Solid State Circuits.
[3]
T. Lee,et al.
A 1.5 V, 1.5 GHz CMOS low noise amplifier
,
1996
.
[4]
Pietro Andreani,et al.
Noise optimization of an inductively degenerated CMOS low noise amplifier
,
2001
.
[5]
R. Jacob Baker,et al.
CMOS Circuit Design, Layout, and Simulation
,
1997
.
[6]
Jack Li,et al.
Design and Performance Analysis of a 866-MHz Low-Power Optimized CMOS LNA for UHF RFID
,
2013,
IEEE Transactions on Industrial Electronics.