Exciton dynamics in nonpolar (110) InGaN/GaN multiple quantum wells grown on GaN templates prepared by lateral epitaxial overgrowth

Exciton dynamics in nonpolar (11-20) InxGa1–xN/GaN multiple quantum wells (QWs) grown on GaN templates prepared by lateral epitaxial overgrowth were studied. Due to the absence of the polarization fields normal to the QW plane, the photoluminescence (PL) peak energy moderately shifted to the higher energy and the radiative lifetime did not change remarkably with the decrease in the well thickness. Similar to the case for polar InGaN QWs, time-resolved PL signals exhibited the nonexponential decay shape, which can be explained by thermalization and subsequent localization of excitons. Although the growth conditions were not fully optimized, values of the PL intensity at 300 K divided by that at 8 K were 25 and 17% for the peaks at 2.92 and 2.60 eV, respectively. (© 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

[1]  James S. Speck,et al.  Nonpolar InGaN∕GaN emitters on reduced-defect lateral epitaxially overgrown a-plane GaN with drive-current-independent electroluminescence emission peak , 2004 .

[2]  Shuji Nakamura,et al.  Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate , 2003 .

[3]  James S. Speck,et al.  Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy , 2003 .

[4]  James S. Speck,et al.  Nonpolar InxGa1-xN/GaN(1(1)over-bar00) multiple quantum wells grown on gamma-LiAlO2(100) by plasma-assisted molecular-beam epitaxy , 2003 .

[5]  James S. Speck,et al.  Structural characterization of nonpolar (112̄0) a-plane GaN thin films grown on (11̄02) r-plane sapphire , 2002 .

[6]  S. Denbaars,et al.  Impact of Internal Electric Field and Localization Effect on Quantum Well Excitons in AlGaN/GaN/InGaN Light Emitting Diodes , 2001 .

[7]  M. Reiche,et al.  Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes , 2000, Nature.

[8]  Alex Zunger,et al.  Resonant hole localization and anomalous optical bowing in InGaN alloys , 1999 .

[9]  Larry A. Coldren,et al.  Effective band gap inhomogeneity and piezoelectric field in InGaN/GaN multiquantum well structures , 1998 .

[10]  Kazumi Wada,et al.  Spatially resolved cathodoluminescence spectra of InGaN quantum wells , 1997 .

[11]  Shuji Nakamura,et al.  Atomic Scale Indium Distribution in a GaN/In0.43Ga0.57N/Al0.1Ga0.9N Quantum Well Structure , 1997 .

[12]  Shuji Nakamura,et al.  Role of self-formed InGaN quantum dots for exciton localization in the purple laser diode emitting at 420 nm , 1997 .

[13]  S. Nakamura,et al.  Spontaneous emission of localized excitons in InGaN single and multiquantum well structures , 1996 .