论文信息 - Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

Transferred-substrate HBTs with 250 GHz current-gain cutoff frequency

We report improved current gain characteristics in the transferred-substrate HBTs, demonstrated by record current gain cutoff frequency f/sub r/ of 254 GHz. This work compares device results from three wafers and points out the relative importance of the factors affecting f/sub r/ and their impact on f/sub max/.

D. Mensa | S. Jaganathan | Q. Lee | J. Guthrie | M.J.W. Rodwell

[1] Shoji Yamahata,et al. Effects of a Compositionally-Graded InxGa1-xAs Base in Abrupt-Emitter InP/InGaAs Heterojunction Bipolar Transistors , 1995 .

[2] D. Mensa,et al. Baseband amplifiers in transferred-substrate HBT technology , 1998, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 20th Annual. Technical Digest 1998 (Cat. No.98CH36260).

[3] E. Sano,et al. InP/InGaAs double-heterojunction bipolar transistors for high-speed optical receivers , 1996 .

[4] D. Mensa,et al. A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology , 1998, IEEE Electron Device Letters.

[5] M. E. Hafizi,et al. Improved current gain and f/sub T/ through doping profile selection in linearly graded heterojunction bipolar transistors , 1990 .