Record high mobility (428cm2/V-s) of CVD-grown Ge/strained Ge0.91Sn0.09/Ge quantum well p-MOSFETs
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C. Liu | Chih-Hsiung Huang | Chung-yi Lin | Hung-Yu Ye | Sun-Rong Jan | I-Hsieh Wong | S. Kuppurao | Chorng-Ping Chang | S. Chu | Fang-Liang Lu | Hua Chung | Yu-Shiang Huang | Yi-Chiau Huang | H. Lan