论文信息 - A two-dimensional mathematical model of the insulated-gate field-effect transistor - 字舞流文

A two-dimensional mathematical model of the insulated-gate field-effect transistor

[1] J. Borel,et al. An accurate two-dimensional numerical analysis of the MOS transistor , 1972 .

[2] M. S. Mock. On the convergence of Gummel's numerical algorithm , 1972 .

[3] Nguyen Huy Xuong,et al. Mathematical 2-dimensional model of semiconductor devices , 1971 .

[4] H. Gummel,et al. Large-signal analysis of a silicon Read diode oscillator , 1969 .

[5] R. P. Kendall,et al. An Approximate Factorization Procedure for Solving Self-Adjoint Elliptic Difference Equations , 1968 .

[6] H. Gummel. A self-consistent iterative scheme for one-dimensional steady state transistor calculations , 1964 .

[7] C. Sah. Characteristics of the metal-Oxide-semiconductor transistors , 1964 .

[8] G. Hellwig. Partial differential equations , 1964 .

[9] J. Gillis,et al. Matrix Iterative Analysis , 1961 .

[10] W. V. Roosbroeck. Theory of the flow of electrons and holes in germanium and other semiconductors , 1950 .