Complementary spin transistor using a quantum well channel

[1]  Hyung-jun Kim,et al.  Electrical detection of coherent spin precession using the ballistic intrinsic spin Hall effect. , 2015, Nature nanotechnology.

[2]  Chulwoo Kim,et al.  Spin-Based Complementary Logic Device Using Datta–Das Transistors , 2015, IEEE Transactions on Electron Devices.

[3]  R. Duine,et al.  New perspectives for Rashba spin-orbit coupling. , 2015, Nature materials.

[4]  Exchange-biased ferromagnetic electrodes and their application to complementary spin transistors , 2015 .

[5]  Chulwoo Kim,et al.  CMOS Digital Integrated Circuits: Analysis & Design, 4th Edition , 2014 .

[6]  L. You,et al.  Spin Hall effect clocking of nanomagnetic logic without a magnetic field. , 2014, Nature nanotechnology.

[7]  Suk Hee Han,et al.  Magnetic-field-controlled reconfigurable semiconductor logic , 2013, Nature.

[8]  H. Gotoh,et al.  Proposal of spin complementary field effect transistor , 2012 .

[9]  Gate modulation of spin precession in a semiconductor channel , 2011 .

[10]  S. Datta,et al.  Voltage-controlled spin precession , 2010, 1001.1523.

[11]  Petr Nemec,et al.  Spin Hall Effect Transistor , 2010, Science.

[12]  S. Datta,et al.  Proposal for an all-spin logic device with built-in memory. , 2010, Nature nanotechnology.

[13]  Hyun Cheol Koo,et al.  Control of Spin Precession in a Spin-Injected Field Effect Transistor , 2009, Science.

[14]  H. Zabel,et al.  Exchange Bias Effect of Ferro-/Antiferromagnetic Heterostructures , 2007, 0705.2055.

[15]  L. J. Sham,et al.  Spin-based logic in semiconductors for reconfigurable large-scale circuits , 2007, Nature.

[16]  C. Adelmann,et al.  Electrical detection of spin transport in lateral ferromagnet–semiconductor devices , 2006, cond-mat/0701021.

[17]  J. Eom,et al.  Electrical spin injection and detection in an InAs quantum well , 2006, cond-mat/0612575.

[18]  D. Grundler.  Large Rashba splitting in InAs quantum wells due to electron wave function penetration into the barrier layers. , 2000, Physical review letters.

[19]  Stuart S. P. Parkin,et al.  Thermal stability of IrMn and MnFe exchange-biased magnetic tunnel junctions , 2000 .

[20]  Y. Huai,et al.  CoFe/IrMn exchange biased top, bottom, and dual spin valves , 2000 .

[21]  Y. Huai,et al.  Effect of underlayer roughness, grain size, and crystal texture on exchange coupled IrMn/CoFe thin films , 2000 .

[22]  Y. Huai,et al.  Spin-valve heads with synthetic antiferromagnet CoFe/Ru/CoFe/IrMn , 1999 .

[23]  M. Kryder,et al.  Magnetic Temperature and Corrosion Properties of the Nife/irmn Exchange Couple , 1998, 7th Joint MMM-Intermag Conference. Abstracts (Cat. No.98CH36275).

[24]  Hideaki Takayanagi,et al.  Gate Control of Spin-Orbit Interaction in an Inverted In0 , 1997 .

[25]  M. Johnson,et al.  Bipolar Spin Switch , 1993, Science.

[26]  S. Datta,et al.  Electronic analog of the electro‐optic modulator , 1990 .

[27]  Johnson,et al.  Interfacial charge-spin coupling: Injection and detection of spin magnetization in metals. , 1985, Physical review letters.

[28]  E. Rashba,et al.  Oscillatory effects and the magnetic susceptibility of carriers in inversion layers , 1984 .

[29]  E. Rashba,et al.  Properties of a 2D electron gas with lifted spectral degeneracy , 1984 .

[30]  G. V. Chester,et al.  Solid-State Physics , 1962, Nature.