论文信息 - Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique

Separation of two distinct fast interface state contributions at the (100)Si/SiO2 interface using the conductance technique

We have studied the annealing of fast and slow Si/SiO2 interface states generated by 10‐MeV electron irradiation using the conductance technique. The fast‐state conductance peak is shown to be separable into contributions from defects characterized by two different capture cross sections, densities of states, and annealing behaviors.

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