X‐ray diffraction and electron microscopy studies of α‐ and β‐Ga2S3

Electron diffraction/microscopy and X-ray diffraction techniques are used to study the α- and β-Ga2S3 compounds. Diffuse streaks directed along [001]* are related to a planar disorder described by three domain variants. The correspondence between domains is effected by rotations of 2π/3 and 4π/3 around the c hexagonal axis common to α and β forms. Heating under electron beam leads to a significant structural change α → α′ directly observed in diffraction patterns and high resolution image.