Implanted‐Barrier Two‐Phase Charge‐Coupled Device

A new kind of charge‐coupled device (CCD) utilizing an ion‐implanted barrier and only two nonoverlapping electrodes per bit is described. The use of implanted charge substantially simplifies device structure. The two‐electrode‐per‐bit configuration permits operation with only one clock. In addition, the device performs better than any previously reported CCD with a loss per transfer of less than 0. 1% up to 6. 5 MHz and 2% at 17 MHz.