Thermally excited silicon oxide beam and bridge resonators in CMOS technology

The design, fabrication, and characterization of thermally excited silicon oxide beam and bridge resonators by a modern industrial CMOS process combined with one additional maskless etching step is reported. The resonant frequencies, vibration amplitudes, and mode shapes of the devices are measured using a laser heterodyne interferometer. The acoustic transmitting and receiving sensitivities of the resonant structures in air are investigated in order to test their possible application as ultrasound transducers for proximity sensing. The experimental results are compared with finite element simulations using ANSYS. >