Annealing properties of open volumes in HfSiOx and HfAlOx gate dielectrics studied using monoenergetic positron beams
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A. Uedono | T. Chikyow | K. Yamabe | K. Torii | T. Ohdaira | K. Ikeuchi | R. Suzuki | M. Muramatsu | A. Hamid | K. Yamada
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