Efficient room-temperature continuous-wave AlGaInP/AlGaAs visible (670 nm) vertical-cavity surface-emitting laser diodes

Significant improvement in the performance of AlGaInP/AlGaAs visible vertical-cavity surface-emitting laser diodes has been achieved in gain-guided planar-geometry devices utilizing proton implants to define the current injection path. Threshold currents as low as 1.25 mA were measured on 10 /spl mu/m-diameter devices, with maximum power output of 0.33 mW from larger devices. Continuous-wave (cw) lasing was achieved at temperatures as high as 45/spl deg/C. The improved diode performance is attributed to better lateral heat-sinking and reduced parasitic heat generation afforded by the planar device structure, relative to previously-reported air-post structures. This work represents the first realization of efficient room-temperature operation of AlGaInP-based visible VCSEL diodes.<<ETX>>

[1]  N. Dutta,et al.  Performance of gain-guided surface emitting lasers with semiconductor distributed Bragg reflectors , 1991 .

[2]  Cavity design for improved electrical injection in InAlGaP/AlGaAs visible (639–661 nm) vertical‐cavity surface‐emitting laser diodes , 1993 .

[3]  Transverse mode emission characteristics of gain‐guided surface emitting lasers , 1993 .

[4]  J. Lott,et al.  AlGaInP visible vertical cavity surface emitting lasers operating with gain contributions from the n=2 quantum well transition , 1993 .

[5]  J. A. Lott,et al.  Photoluminescence linewidths in metalorganic vapor phase epitaxially grown ordered and disordered InAlGaP alloys , 1992 .

[6]  L. Coldren,et al.  InGaAs vertical-cavity surface-emitting lasers , 1991 .

[7]  A. Scherer,et al.  Vertical-cavity surface-emitting lasers: Design, growth, fabrication, characterization , 1991 .

[8]  Modeling the current to light characteristics of index‐guided vertical‐cavity surface‐emitting lasers , 1993 .

[9]  Randall S. Geels,et al.  Drift leakage current in AlGaInP quantum-well lasers , 1993 .

[10]  S. A. Chalmers,et al.  High single-mode power conversion efficiency vertical-cavity top-surface-emitting lasers , 1993, IEEE Photonics Technology Letters.

[11]  J. A. Lott,et al.  Room temperature continuous wave operation of red vertical cavity surface emitting laser diodes , 1993 .

[12]  L.A. Coldren,et al.  High-power temperature-insensitive gain-offset InGaAs/GaAs vertical-cavity surface-emitting lasers , 1993, IEEE Photonics Technology Letters.

[13]  J. A. Lott,et al.  MOVPE growth of InAlGaP-based visible vertical-cavity surface-emitting lasers , 1992 .

[14]  J. A. Lott,et al.  Electrically injected visible (639-661 nm) vertical cavity surface emitting laser , 1993 .