Requirements of the inspection for double patterning technology reticles
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[1] Toshihiro Oga,et al. Beyond k1=0.25 lithography: 70-nm L/S patterning using KrF scanners , 2003, SPIE Photomask Technology.
[2] Jae-Sung Choi,et al. Impact of mask defect in a high MEEF process , 2003, SPIE Advanced Lithography.
[3] C. Holfeld,et al. Limitations of optical reticle inspection for 45-nm node and beyond , 2006, SPIE Photomask Technology.
[4] Shmoolik Mangan,et al. What you see is what you print: aerial imaging as an optimal discriminator between printing and non-printing photomask defects , 2008, Photomask Japan.
[5] Tim Pratt,et al. Evaluating practical vs. theoretical inspection system capability with a new programmed defect test mask designed for 3X and 4X technology nodes , 2008, Photomask Technology.
[6] Carl Hess,et al. High resolution inspection with wafer plane die: database defect detection , 2008, Photomask Technology.
[7] Yasutaka Kikuchi,et al. Impact of transmitted and reflected light inspection on mask inspectability, defect sensitivity, and mask design rule restrictions , 2007, Photomask Japan.
[8] James Word,et al. MEEF-based mask inspection , 2004, SPIE Photomask Technology.
[9] Won Il Cho,et al. The detectability of Qz phase defects and its application for 65nm node CPL mask manufacturing , 2005, SPIE Photomask Technology.
[10] Paul Yu,et al. Inspection results for 32nm logic and sub-50nm half-pitch memory reticles using the TeraScanHR , 2007, SPIE Photomask Technology.