The third-order nonlinear optical coefficients of Si, Ge, and Si1−xGex in the midwave and longwave infrared
暂无分享,去创建一个
[1] H. P. Godfried,et al. Gain reduction measurements in transient stimulated Raman scattering , 1995 .
[2] B Jalali,et al. Anti-Stokes Raman conversion in silicon waveguides. , 2003, Optics express.
[3] Michael G. Raymer,et al. Stimulated Raman scattering: Unified treatment of spontaneous initiation and spatial propagation , 1981 .
[4] Yasuhiko Arakawa,et al. Nonlinear-Optic Silicon-Nanowire Waveguides , 2005 .
[5] Richard A. Soref,et al. Silicon waveguided components for the long-wave infrared regionThis article was submitted to the spe , 2006 .
[6] Donald W. Feldman,et al. Raman Scattering by Silicon and Germanium , 1967 .
[7] Michal Lipson,et al. Frequency conversion over two-thirds of an octave in silicon nanowaveguides. , 2010, Optics express.
[8] F. H. Dacol,et al. Raman scattering analysis of relaxed GexSi1−x alloy layers , 1993 .
[9] Omri Raday,et al. A cascaded silicon Raman laser , 2008 .
[10] M. Paniccia,et al. Net optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering. , 2004, Optics express.
[11] Charles C. Wang,et al. Observation of Optical Mixing Due to Conduction Electrons in n -Type Germanium , 1970 .
[12] Sanja Zlatanovic,et al. Mid-infrared wavelength conversion in silicon waveguides using ultracompact telecom-band-derived pump source , 2010 .
[13] Bahram Jalali,et al. Raman amplification and lasing in SiGe waveguides. , 2005, Optics express.
[14] H. Driel,et al. Two-photon absorption and Kerr coefficients of silicon for 850–2200nm , 2007 .
[15] Yurii A. Vlasov,et al. Mid-infrared optical parametric amplifier using silicon nanophotonic waveguides , 2010, 1001.1533.
[16] Mario J. Paniccia,et al. Raman gain and nonlinear optical absorption measurements in a low-loss silicon waveguide , 2004 .
[17] Ramki Kalyanaraman,et al. Phonon-assisted two-photon absorption in the presence of a dc-field : the nonlinear Franz-Keldysh effect in indirect gap semiconductors , 2006 .
[18] Willem L. Vos,et al. Spatial homogeneity of optically switched semiconductor photonic crystals and of bulk semiconductors , 2005 .
[19] Hon Ki Tsang,et al. Nonlinear absorption and Raman scattering in silicon-on-insulator optical waveguides , 2004 .
[20] R. Soref. Mid-infrared photonics in silicon and germanium , 2010 .
[21] Bahram Jalali,et al. Inverse Raman scattering in silicon: A free-carrier enhanced effect , 2009 .
[22] B. Jalali,et al. Demonstration of a Mid-infrared silicon Raman amplifier. , 2007, Optics express.
[23] Philippe M. Fauchet,et al. Dispersion of silicon nonlinearities in the near infrared region , 2007 .
[24] T. Tsuchizawa,et al. Four-wave mixing in silicon wire waveguides. , 2005, Optics express.
[25] Jeff F. Young,et al. Nonlinear propagation of ultrafast 1.5 μm pulses in high-index-contrast silicon-on-insulator waveguides , 2004 .
[26] C. Rauscher,et al. ANALYSIS OF PICOSECOND MID-INFRARED PULSES BY TWO-PHOTON ABSORPTION IN GERMANIUM , 1997 .
[27] F. H. Dacol,et al. Measurements of alloy composition and strain in thin GexSi1−x layers , 1994 .
[28] Alexander Fang,et al. Net continuous wave optical gain in a low loss silicon-on-insulator waveguide by stimulated Raman scattering. , 2005, Optics express.
[29] Y. Vlasov,et al. C-band wavelength conversion in silicon photonic wire waveguides. , 2005, Optics express.
[30] A C Walker,et al. Two-photon absorption in indium antimonide and germanium , 1976 .
[31] O. Boyraz,et al. Self phase modulation induced spectral broadening in silicon waveguides , 2004, Conference on Lasers and Electro-Optics, 2004. (CLEO)..
[32] D. Haueisen,et al. Multiline phase conjugation at 4 μm in germanium , 1980 .
[33] Yurii A. Vlasov,et al. Engineering nonlinearities in nanoscale optical systems: physics and applications in dispersion-engineered silicon nanophotonic wires , 2009 .
[34] D. Moss,et al. Band-structure calculation of dispersion and anisotropy in χ↔(3) for third-harmonic generation in Si, Ge, and GaAs , 1990 .
[35] J. Humlíček,et al. Infrared refractive index of germanium-silicon alloy crystals. , 1992, Applied optics.
[36] Y. Vlasov,et al. Raman amplification in ultrasmall silicon-on-insulator wire waveguides. , 2004, Optics express.
[37] Hon Ki Tsang,et al. Nonlinear optical properties of silicon waveguides , 2008 .
[38] A. Shepherd,et al. Semiconductors , 1967, Nature.
[39] M. Dinu,et al. Dispersion of phonon-assisted nonresonant third-order nonlinearities , 2003 .
[40] M. Cardona,et al. Relative Raman cross sections and deformation potentials of several semiconductors at the E1 resonance , 1976 .
[41] Hon Ki Tsang,et al. Efficient Raman amplification in silicon-on-insulator waveguides , 2004 .
[42] R. K. Chang,et al. Spontaneous-Raman-Scattering Efficiency and Stimulated Scattering in Silicon , 1970 .
[43] Michal Lipson,et al. Demonstration of high Raman gain in a submicrometer-size silicon-on-insulator waveguide. , 2005, Optics letters.
[44] D. E. Watkins,et al. Determination of the third-order nonlinear optical coefficients of germanium through ellipse rotation. , 1980, Optics letters.
[45] M. Cardona,et al. First-order Raman scattering in germanium resonant with the E0 gap , 1985 .
[46] Q. Lin,et al. Anisotropic nonlinear response of silicon in the near-infrared region , 2007, 2007 Conference on Lasers and Electro-Optics (CLEO).
[47] J. Wynne,et al. Optical Third-Order Mixing in GaAs, Ge, Si, and InAs , 1969 .
[48] Bahram Jalali,et al. Silicon photonics: Nonlinear optics in the mid-infrared , 2010 .
[49] G. P. Arnold,et al. Nonlinear Loss in Ge in the 2.5-4-microm Range. , 1973, Applied optics.
[50] Xiaogang Chen,et al. Self-phase-modulation in submicron silicon-on-insulator photonic wires. , 2006, Optics express.
[51] Bahram Jalali,et al. Demonstration of 11dB fiber-to-fiber gain in a silicon Raman amplifier , 2004, IEICE Electron. Express.
[52] Mihaela Dinu,et al. Third-order nonlinearities in silicon at telecom wavelengths , 2003 .
[53] Richard A. Soref,et al. Toward silicon-based longwave integrated optoelectronics (LIO) , 2008, SPIE OPTO.
[54] V. Volodin,et al. Determination of the composition and stresses in GexSi(1−x) heterostructures from Raman spectroscopy data: Refinement of model parameters , 2006 .
[55] B. Jalali,et al. Observation of stimulated Raman amplification in silicon waveguides , 2003, The 16th Annual Meeting of the IEEE Lasers and Electro-Optics Society, 2003. LEOS 2003..
[56] I. Day,et al. Optical dispersion, two-photon absorption and self-phase modulation in silicon waveguides at 1.5 μm wavelength , 2002 .
[57] Mansoor Sheik-Bahae,et al. Dispersion of bound electron nonlinear refraction in solids , 1991 .
[58] Richard A. Soref,et al. Electro‐optical and nonlinear optical coefficients of ordered group IV semiconductor alloys , 1992 .
[59] D. Dimitropoulos,et al. Prospects for Silicon Mid-IR Raman Lasers , 2006, IEEE Journal of Selected Topics in Quantum Electronics.
[60] Bahram Jalali,et al. Observation of Raman emission in silicon waveguides at 1.54 microm. , 2002, Optics express.
[61] B. Khelifa,et al. Band structure calculations of GexSi1−x , 1994 .
[62] Markus B. Raschke,et al. Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies , 2006 .