PIN diode is in fact a device used in a variety of applications for low frequencies up to high radio frequencies, such as photo detector, power rectifier, an RF switch, and applications of high voltage power electronics. Many available models and equations characterize static and transient simulation of PIN diodes. This paper presents a numerical time domain model for nanometric Silicon PIN diode. In this work, all algorithms are implemented using the MATLAB software. The active device model is based on the drift-diffusion model (DDM) which consider carrier's transport and Shockley-Read-Hall (SRH) model. Two-dimensional finite-different (2D-FD) algorithm is proposed to solve the active device model and full implicit backward Euler's scheme has been used to accomplish time domain. The obtained implicit matrix systems are solved by using an efficient and accurate algorithm based on the well-known Gummel's iterations. The obtained solutions provide the time and space distribution of the electrical variables at each time step. Finally, the obtained results are presented and compared with numerical simulations using finite element software (SILVACO-TCAD). Good agreements are observed.
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