论文信息 - An accurate scalable nonlinear model for GaAs E-pHEMT and low noise amplifiers

An accurate scalable nonlinear model for GaAs E-pHEMT and low noise amplifiers

An accurate non-linear large signal model is developed for GaAs E-pHEMT by revising the Verilog-A source code of the Angelov (Chalmers) model. The model is scalable and the scaling is fully verified by DC, thermal, capacitances, and S-parameters under multiple bias conditions. Excellent agreement between the simulation and measurement has been achieved for two device sizes at different temperatures. The model is applied to a low noise amplifier and can precisely predict RF power, gain, P1dB, G1dB, operation current, efficiency, OIP3, and noise figure.

[1] Herbert Zirath,et al. On the performance of low-noise low-DC-power-consumption cryogenic amplifiers , 2002 .

[2] Herbert Zirath,et al. Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's , 1995 .

[3] V. Camarchia,et al. Self-Consistent Electrothermal Modeling of Class A, AB, and B Power GaN HEMTs Under Modulated RF Excitation , 2007, IEEE Transactions on Microwave Theory and Techniques.

[4] I. Angelov,et al. Extensions of the Chalmers nonlinear HEMT and MESFET model , 1996 .

[5] H. Zirath,et al. An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[6] Jiann-Shiun Yuan,et al. Sige, Gaas, and Inp Heterojunction Bipolar Transistors , 1999 .