论文信息 - Capacitance measurements and k-value extractions of low-k films - 字舞流文

Capacitance measurements and k-value extractions of low-k films

Ivan Ciofi | Gerald Beyer | Mikhail R. Baklanov | G. Beyer | I. Ciofi | Zsolt Tkei | M. Baklanov | Zsolt Tkei

[1] Larry Zhao,et al. A novel test structure to study intrinsic reliability of barrier/low-k , 2009, 2009 IEEE International Reliability Physics Symposium.

[2] G. Beyer,et al. Characterization of Plasma Damage in Low-k Films by TVS Measurements , 2009 .

[3] Y. Ando,et al. Evaluation of plasma damage in ultra-low-k materials with cap film using extracted k-value method , 2008 .

[4] G. Mannaert,et al. Effects of Bias, Pressure and Temperature in Plasma Damage of Ultra Low-k Films , 2007 .

[5] F. Ingvarson,et al. Compact Spreading Resistance Model for Rectangular Contacts on Uniform and Epitaxial Substrates , 2007, IEEE Transactions on Electron Devices.

[6] Paul K. Hurley,et al. Physical and electrical properties of low dielectric constant self-assembled mesoporous silica thin films , 2007, Microelectron. Reliab..

[7] C. Ye,et al. Effect of Doping on Structure and Dielectric Property of SiCOH Films Prepared by Decamethylcyclopentasiloxane , 2007 .

[8] Karen Maex,et al. Low dielectric constant materials for microelectronics , 2003 .

[9] Chenming Hu,et al. MOS capacitance measurements for high-leakage thin dielectrics , 1999 .

[10] H. Bender,et al. Structural change in porous silica thin film after plasma treatment , 1999 .

[11] C. Yue,et al. Kinetics of copper drift in PECVD dielectrics , 1996, IEEE Electron Device Letters.

[12] A. K. Sinha. MOS (Si‐Gate) Compatibility of RF Diode and Triode Sputtering Processes , 1976 .