Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates
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The surface segregation of indium atoms was investigated in situ and in real time by reflection high-energy electron diffraction (RHEED) during molecular-beam epitaxy of InGaAs layers on misoriented GaAs(001) substrates. The strong damping of the RHEED oscillations was quantitatively related to the strength of the segregation process that was found to decrease with increasing miscut angle.