Low-threshold oxide-confined 1.3-μm quantum-dot laser

Data are presented on low threshold, 1.3-/spl mu/m oxide-confined InGaAs-GaAs quantum dot lasers. A very low continuous-wave threshold current of 1.2 mA with a threshold current density of 28 A/cm/sup 2/ is achieved with p-up mounting at room temperature. For slightly larger devices the continuous-wave threshold current density is as low as 19 A/cm/sup 2/.

[1]  Collisional broadening and shift of spectral lines in quantum dot lasers , 1999 .

[2]  Diana L. Huffaker,et al.  Room-temperature continuous-wave operation of a single-layered 1.3 μm quantum dot laser , 1999 .

[3]  A. R. Sugg,et al.  Native oxide top‐ and bottom‐confined narrow stripe p‐n AlyGa1−yAs‐GaAs‐InxGa1−xAs quantum well heterostructure laser , 1993 .

[4]  Nikolai N. Ledentsov,et al.  1.3 [micro sign]m GaAs-based laser using quantum dots obtained by activated spinodal decomposition , 1999 .

[5]  Andreas Stintz,et al.  Extremely low room-temperature threshold current density diode lasers using InAs dots in In/sub 0.15/Ga/sub 0.85/As quantum well , 1999 .

[6]  Diana L. Huffaker,et al.  Spontaneous emission and threshold characteristics of 1.3-/spl mu/m InGaAs-GaAs quantum-dot GaAs-based lasers , 1999 .

[7]  G. Park,et al.  Temperature dependence of lasing characteristics for long-wavelength (1.3-μm) GaAs-based quantum-dot lasers , 1999, IEEE Photonics Technology Letters.

[8]  Larry A. Coldren,et al.  Design parameters for lateral carrier confinement in quantum-dot lasers , 1999 .

[9]  D. Deppe,et al.  1.3 μm room-temperature GaAs-based quantum-dot laser , 1998 .

[10]  P. Dapkus,et al.  Lasing characteristics of high-performance narrow-stripe InGaAs-GaAs quantum-well lasers confined by AlAs native oxide , 1996, IEEE Photonics Technology Letters.

[11]  A. R. Sugg,et al.  Hydrolyzation oxidation of AlxGa1−xAs‐AlAs‐GaAs quantum well heterostructures and superlattices , 1990 .

[12]  N. Yokoyama,et al.  1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA , 1999, IEEE Photonics Technology Letters.

[13]  Diana L. Huffaker,et al.  Electroluminescence efficiency of 1.3 μm wavelength InGaAs/GaAs quantum dots , 1998 .