论文信息 - A new accurate model for drain–gate avalanche current source of GaAs MESFET

A new accurate model for drain–gate avalanche current source of GaAs MESFET

A new drain–gate avalanche current source model, which is controlled by Vds and Vgs, is proposed. A Fujitsu MESFET transistor, FLC-103WG, is adopted for measurement, and the model is extracted. Compared with several conventional models, the proposed model is found to be more accurate than the Curtice and Fujii model. © 2000 John Wiley & Sons, Inc. Microwave Opt Technol Lett 25: 269–271, 2000.

Ban-Leong Ooi | J. Ma | Q. Xiao

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