Modeling of NBTI Stress Induced Hole-Trapping and Interface-State-Generation Mechanisms under a Wide Range of Bias Conditions

[1]  T. R. Oldham,et al.  Spatial Dependence of Trapped Holes Determined from Tunneling Analysis and Measured Annealing , 1986, IEEE Transactions on Nuclear Science.

[2]  M. Nelhiebel,et al.  The Paradigm Shift in Understanding the Bias Temperature Instability: From Reaction–Diffusion to Switching Oxide Traps , 2011, IEEE Transactions on Electron Devices.

[3]  V. Huard.  Two independent components modeling for Negative Bias Temperature Instability , 2010, 2010 IEEE International Reliability Physics Symposium.

[4]  T. Grasser,et al.  Time-dependent defect spectroscopy for characterization of border traps in metal-oxide-semiconductor transistors , 2010 .

[5]  H. Kufluoglu,et al.  A Generalized Reaction–Diffusion Model With Explicit H– $\hbox{H}_{2}$ Dynamics for Negative-Bias Temperature-Instability (NBTI) Degradation , 2007, IEEE Transactions on Electron Devices.

[6]  H. Reisinger,et al.  Analysis of NBTI Degradation- and Recovery-Behavior Based on Ultra Fast VT-Measurements , 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

[7]  Y. Nissan-Cohen,et al.  Trap generation and occupation dynamics in SiO2 under charge injection stress , 1986 .

[8]  S. Mahapatra,et al.  Defect Generation in p-MOSFETs Under Negative-Bias Stress: An Experimental Perspective , 2008, IEEE Transactions on Device and Materials Reliability.

[9]  S. Mahapatra,et al.  Recent Issues in Negative-Bias Temperature Instability: Initial Degradation, Field Dependence of Interface Trap Generation, Hole Trapping Effects, and Relaxation , 2007, IEEE Transactions on Electron Devices.

[10]  S. Krishnan,et al.  A Model for NBTI in Nitrided Oxide MOSFETs Which Does Not Involve Hydrogen or Diffusion , 2011, IEEE Transactions on Device and Materials Reliability.

[11]  Stefan Decker,et al.  Energetic distribution of oxide traps created under negative bias temperature stress and their relation to hydrogen , 2010 .

[12]  M. Nelhiebel,et al.  A two-stage model for negative bias temperature instability , 2009, 2009 IEEE International Reliability Physics Symposium.

[13]  D. Schroder,et al.  Negative bias temperature instability: Road to cross in deep submicron silicon semiconductor manufacturing , 2003 .

[14]  Mitiko Miura-Mattausch,et al.  Unified Reaction–Diffusion Model for Accurate Prediction of Negative Bias Temperature Instability Effect , 2012 .

[15]  B. Kaczer,et al.  An energy-level perspective of bias temperature instability , 2008, 2008 IEEE International Reliability Physics Symposium.

[16]  Yangang Wang.  Effects of Interface States and Positive Charges on NBTI in Silicon-Oxynitride p-MOSFETs , 2008, IEEE Transactions on Device and Materials Reliability.

[17]  M.A. Alam,et al.  Isolation of NBTI Stress Generated Interface Trap and Hole-Trapping Components in PNO p-MOSFETs , 2009, IEEE Transactions on Electron Devices.

[18]  M. Denais,et al.  NBTI degradation: From physical mechanisms to modelling , 2006, Microelectron. Reliab..

[19]  E. K. Evangelou,et al.  Electrical characterization of the SiON/Si interface for applications on optical and MOS devices , 2003 .

[20]  Chenming Hu,et al.  Electron-trap generation by recombination of electrons and holes in SiO2 , 1987 .

[21]  B. Kaczer,et al.  NBTI Lifetime Prediction and Kinetics at Operation Bias Based on Ultrafast Pulse Measurement , 2010, IEEE Transactions on Electron Devices.

[22]  Scott E. Thompson,et al.  Oxide field and thickness dependence of trap generation in 9–30 nm dry and dry/wet/dry oxides , 1991 .

[23]  Y. Yeo,et al.  Characterization and Physical Origin of Fast Vth Transient in NBTI of pMOSFETs with SiON Dielectric , 2006, 2006 International Electron Devices Meeting.

[24]  Pong-Fei Lu,et al.  A built-in BTI monitor for long-term data collection in IBM microprocessors , 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).

[25]  S. Natarajan,et al.  Impact of negative bias temperature instability on digital circuit reliability , 2002, 2002 IEEE International Reliability Physics Symposium. Proceedings. 40th Annual (Cat. No.02CH37320).

[26]  S. Deora,et al.  A critical re-evaluation of the usefulness of R-D framework in predicting NBTI stress and recovery , 2011, 2011 International Reliability Physics Symposium.

[27]  P. Nicollian,et al.  Negative bias temperature instability mechanism: The role of molecular hydrogen , 2006 .