Thickness scaling of polycrystalline Pb(Zr,Ti)O3 films downto 35nm prepared by metalorganic chemical vapor depositionhaving good ferroelectric properties

Polycrystalline Pb(Zr0.35Ti0.65)O3 [PZT] films were prepared at 540°C by metalorganic chemical vapor deposition (MOCVD). Lower leakage and lower voltage-saturated 50-nm-thick PZT films were deposited on (111)Ir∕TiO2∕SiO2∕Si substrates than those on (111)Pt∕TiO2∕SiO2∕Si substrates. Moreover, low leakage current and good ferroelectricity were obtained for 35-nm-thick PZT films prepared on (111)Ir∕TiO2∕SiO2∕Si substrates by using source-gas-pulse-introduced MOCVD (pulsed-MOCVD) rather than conventional continuous gas supply MOCVD (continuous-MOCVD). As a result, 35-nm-thick PZT films with a Pr value of 47μC∕cm2 at a maximum applied voltage of 1.2V were obtained on (111)Ir∕TiO2∕SiO2∕Si substrates with pulsed-MOCVD. This opens the way for scaling down the film thickness of polycrystalline PZT films further while retaining good ferroelectricity.Polycrystalline Pb(Zr0.35Ti0.65)O3 [PZT] films were prepared at 540°C by metalorganic chemical vapor deposition (MOCVD). Lower leakage and lower voltage-saturated 50-nm-thick PZT films were deposited on (111)Ir∕TiO2∕SiO2∕Si substrates than those on (111)Pt∕TiO2∕SiO2∕Si substrates. Moreover, low leakage current and good ferroelectricity were obtained for 35-nm-thick PZT films prepared on (111)Ir∕TiO2∕SiO2∕Si substrates by using source-gas-pulse-introduced MOCVD (pulsed-MOCVD) rather than conventional continuous gas supply MOCVD (continuous-MOCVD). As a result, 35-nm-thick PZT films with a Pr value of 47μC∕cm2 at a maximum applied voltage of 1.2V were obtained on (111)Ir∕TiO2∕SiO2∕Si substrates with pulsed-MOCVD. This opens the way for scaling down the film thickness of polycrystalline PZT films further while retaining good ferroelectricity.