The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices
暂无分享,去创建一个
[1] S. Ramey,et al. 3D Monte Carlo Modeling of Thin SOI MOSFETs Including the Effective Potential and Random Dopant Distribution , 2002 .
[2] Can the Density Gradient Approach Describe the Source-Drain Tunnelling in Decanano Double-Gate MOSFETs? , 2002 .
[3] M. Anantram,et al. Two-dimensional quantum mechanical modeling of nanotransistors , 2001, cond-mat/0111290.
[4] S. Datta,et al. Examination of design and manufacturing issues in a 10 nm double gate MOSFET using nonequilibrium Green's function simulation , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[5] D. Hisamoto. FD/DG-SOI MOSFET-a viable approach to overcoming the device scaling limit , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[6] M. Hussein,et al. An enhanced 130 nm generation logic technology featuring 60 nm transistors optimized for high performance and low power at 0.7 - 1.4 V , 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).
[7] Andrew R. Brown,et al. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: a 3-D density-gradient simulation study , 2001 .
[8] Quantum Corrections in 3-D Drift Diffusion Simulations of Decanano MOSFETs Using an Effective Potential , 2001 .
[9] K. Hess,et al. A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[10] D. Vasileska,et al. Quantum effects in MOSFETs: use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices , 2000, International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138).
[11] Mario G. Ancona,et al. Equations of state for silicon inversion layers , 2000 .
[12] Toshitsugu Sakamoto,et al. Observation of source-to-drain direct tunneling current in 8 nm gate electrically variable shallow junction metal–oxide–semiconductor field-effect transistors , 2000 .
[13] Quantum potential approaches for nano-scale device simulation , 2000, 7th International Workshop on Computational Electronics. Book of Abstracts. IWCE (Cat. No.00EX427).
[14] Quantum mechanical Monte Carlo approach to electron transport at heterointerface , 2000 .
[15] Toshitsugu Sakamoto,et al. Transistor characteristics of 14-nm-gate-length EJ-MOSFETs , 2000 .
[16] D. Ferry. The onset of quantization in ultra-submicron semiconductor devices , 2000 .
[17] S. Saini,et al. Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 micron MOSFETs , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[18] A. Asenov. Random dopant induced threshold voltage lowering and fluctuations in sub-0.1 /spl mu/m MOSFET's: A 3-D "atomistic" simulation study , 1998 .
[19] Yuan Taur,et al. Fundamentals of Modern VLSI Devices , 1998 .
[20] Zhiping Yu,et al. Multi-dimensional Quantum Effect Simulation Using a Density-Gradient Model and Script-Level Programming Techniques , 1998 .
[21] Gerhard Klimeck,et al. Quantitative simulation of a resonant tunneling diode , 1997, Journal of Applied Physics.
[22] M. R. Pinto,et al. Electron and hole quantization and their impact on deep submicron silicon p- and n-MOSFET characteristics , 1997 .
[23] Gerhard Klimeck,et al. Quantitative Resonant Tunneling Diode Simulation , 1997 .
[24] J. Barker. CHAPTER 19 – Fundamental Aspects of Quantum Transport Theory , 1992 .
[25] G. Iafrate,et al. Quantum correction to the equation of state of an electron gas in a semiconductor. , 1989, Physical review. B, Condensed matter.
[26] C. Snowden. Semiconductor Device Modelling , 1988 .
[27] P. Carruthers,et al. Quantum collision theory with phase-space distributions , 1983 .
[28] H. L. Grubin,et al. The Wigner Distribution Function , 1982 .
[29] A. Fetter,et al. Quantum Theory of Many-Particle Systems , 1971 .
[30] F. Stern. Iteration methods for calculating self-consistent fields in semiconductor inversion layers , 1970 .
[31] T. G. Cowling,et al. The mathematical theory of non-uniform gases , 1939 .