Band offsets in HfSiO4/IGZO heterojunctions

InGaZnO4 (IGZO) is attracting interest for transparent thin film transistors because of its excellent transport properties even in amorphous films deposited at low temperatures. The basic parameters of potential gate dielectric materials for IGZO is still lacking in many cases. The authors have measured the band offsets of sputtered HfSiO4 on IGZO using x-ray photoelectron spectroscopy and obtained the bandgaps of the materials using reflection electron energy loss spectroscopy. The effect of atmospheric exposure on the band offsets was systematically examined. Previous work has shown that both HfO2 and SiO2 have nested type I alignments on IGZO. However, the HfSiO4/IGZO system has a staggered, type II alignment, with a valence band offset of −0.43 ± 0.04 eV for samples in which all the layers were kept in vacuum or −0.27 ± 0.03 eV for samples exposed to atmosphere prior to the measurement. The conduction band offset for HfSiO4/IGZO was derived as 3.07 ± 0.31 eV for the vacuum samples from the measured ba...

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