Revolutionary innovations in power discrete devices

During the last five years, revolutionary advances in power semiconductor devices have occurred. At the start of this decade, discrete power devices consisted of bipolar devices such as the thyristor and bipolar junction transistor, and unipolar devices such as the power MOSFET and JFET. The recent merger of these technologies to create a new class of devices--the MOS-bipolar family--has been responsible for a resurgence in power electronics because these devices operate at a high current density leading to a low chip cost and because they can be controlled by using low cost integrated drive circuitry. This paper reviews the progress in MOS-bipolar discrete device technology. Trends in cell design and power handling capability are provided as a guide to forecasting technological advances.

[1]  B.J. Baliga,et al.  Switching speed enhancement in insulated gate transistors by electron irradiation , 1984, IEEE Transactions on Electron Devices.

[2]  M.S. Adler,et al.  Suppressing latchup in insulated gate transistors , 1984, IEEE Electron Device Letters.

[3]  B.J. Baliga,et al.  VIB-4 the effect of channel length and gate oxide thickness on the performance of insulated gate transistors , 1985, IEEE Transactions on Electron Devices.

[4]  B. Jayant Baliga.  Switching lots of watts at high speeds , 1981 .

[5]  H. Takagi,et al.  A new vertical power MOSFET structure with extremely reduced on-resistance , 1985, IEEE Transactions on Electron Devices.

[6]  M. Kurata,et al.  Non-latch-up 1200V 75A bipolar-mode MOSFET with large ASO , 1984, 1984 International Electron Devices Meeting.

[7]  M. Stoisiek,et al.  MOS GTO—A turn off thyristor with MOS-controlled emitter shorts , 1985, 1985 International Electron Devices Meeting.

[8]  M.S. Adler,et al.  25 amp, 500 volt insulated gate transistors , 1983, 1983 International Electron Devices Meeting.

[9]  A. Goodman,et al.  Improved COMFETs with fast switching speed and high-current capability , 1983, 1983 International Electron Devices Meeting.