Eliminating surface effects via employing nitrogen doping to significantly improve the stability and reliability of ZnO resistive memory

Metal oxides suffering from oxygen molecule chemisorption display environment-dependent metastability, leading to unstable resistive memory characteristics and performance degradation. To obtain ambient-independent characteristics, we introduced nitrogen into ZnO resistive memory devices, compensating for the native defects and suppressing oxygen chemisorption, giving rise to a significant improvement in switching behavior without undesired surface effects. Moreover, by thermal activation of the nitrogen doping via annealing, an increased yield ratio from 50% to 82%, a reduced current compliance from 15 mA to 5 mA, and more stable cycling endurance are obtained. Our findings give physical insight into designing resistive memory devices.

[1]  Po-Tsun Liu,et al.  Nitrogenated amorphous InGaZnO thin film transistor , 2011 .

[2]  Yong Ding,et al.  Photoconductive enhancement of single ZnO nanowire through localized Schottky effects. , 2010, Optics express.

[3]  Yu-Lun Chueh,et al.  ZnO1-x nanorod arrays/ZnO thin film bilayer structure: from homojunction diode and high-performance memristor to complementary 1D1R application. , 2012, ACS nano.

[4]  R. Dittmann,et al.  Redox‐Based Resistive Switching Memories – Nanoionic Mechanisms, Prospects, and Challenges , 2009, Advanced materials.

[5]  J. Tominaga,et al.  Direct observation of nitrogen location in molecular beam epitaxy grown nitrogen-doped ZnO. , 2006 .

[6]  C. Soci,et al.  ZnO nanowire UV photodetectors with high internal gain. , 2007, Nano letters.

[7]  N. Xu,et al.  Characteristics and mechanism of conduction/set process in TiN∕ZnO∕Pt resistance switching random-access memories , 2008 .

[8]  Po-Chiang Chen,et al.  Chemical Sensors and Electronic Noses Based on 1-D Metal Oxide Nanostructures , 2008, IEEE Transactions on Nanotechnology.

[9]  Z. Fan,et al.  ZnO nanowire field-effect transistor and oxygen sensing property , 2004 .

[10]  Jr-hau He,et al.  Surface effects on optical and electrical properties of ZnO nanostructures , 2010 .

[11]  Surface effect on resistive switching behaviors of ZnO , 2011 .

[12]  Jr-hau He,et al.  Photocarrier Relaxation Behavior of a Single ZnO Nanowire UV Photodetector: Effect of Surface Band Bending , 2012, IEEE Electron Device Letters.

[13]  M. J. Chen,et al.  ZnO/Al2O3 core–shell nanorod arrays: growth, structural characterization, and luminescent properties , 2009, 2010 3rd International Nanoelectronics Conference (INEC).

[14]  Hyungjun Kim,et al.  High performance thin film transistor with low temperature atomic layer deposition nitrogen-doped ZnO , 2007 .

[15]  Shimeng Yu,et al.  On the Switching Parameter Variation of Metal Oxide RRAM—Part II: Model Corroboration and Device Design Strategy , 2012, IEEE Transactions on Electron Devices.

[16]  S. M. Durbin,et al.  Influence of oxygen vacancies on Schottky contacts to ZnO , 2008 .

[17]  Hyun-Joong Chung,et al.  Electronic transport properties of amorphous indium-gallium-zinc oxide semiconductor upon exposure to water , 2008 .

[18]  C. Ho,et al.  Polymer functionalized ZnO nanobelts as oxygen sensors with a significant response enhancement , 2009, Nanotechnology.

[19]  Wen-Yuan Chang,et al.  Resistive switching behaviors of ZnO nanorod layers , 2010 .

[20]  Jr-hau He,et al.  Probing surface band bending of surface-engineered metal oxide nanowires. , 2012, ACS nano.

[21]  Run-Wei Li,et al.  Nonvolatile resistive switching in metal/La-doped BiFeO3/Pt sandwiches , 2010, Nanotechnology.