论文信息 - SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMS

SOME OBSERVATIONS ON THE ELECTROMIGRATION IN ALUMINUM FILMS

Thin‐film aluminum resistors with thermally grown SiO2 as the substrate have been subjected to very high current densities of the order 0.5 to 2 × 106 A/cm2. The temperature of the resistor is estimated to be (185 ± 15)°C at high current densities. It is observed that an opening occurs in most of these resistors close to the cathode. Experimental evidence is presented to show that electromigration leads to the observed failures in these thin‐film aluminum resistors.

P. Ghate | P. B. Ghate

[1] R. Penney. Current-induced mass transport in aluminum☆ , 1964 .

[2] J. Friedel,et al. Sur l'electrolyse des alliages metalliques , 1962 .

[3] G. Sullivan. Electromigration and Thermal Transport in Sodium Metal , 1967 .

[4] D. O'boyle. Observations on Electromigration and the Soret Effect in Tungsten , 1965 .

[5] G. Hevesy,et al. Diffusion in Metallen , 1931, Zeitschrift für Elektrochemie und angewandte physikalische Chemie.

[6] R. P. Johnson. Drift of Adsorbed TH on W Filaments Heated with d.c. , 1938 .

[7] H. B. Huntington,et al. Current-induced marker motion in gold wires☆ , 1961 .

[8] P. Ho,et al. Electromigration and void observation in silver , 1966 .