Tuning of the electronic characteristics of ZnO nanowire transistors and their logic device application

We present the tuning of electrical characteristics of ZnO nanowire field effect transistors (FETs) by controlling surface morphology and size of nanowires and by introducing proton-irradiation-assisted manipulation and further demonstrate their logic inverter circuit. The FETs made from surface-architecture-controlled ZnO nanowires exhibit two different types of operation modes, which are distinguished as depletion and enhancement modes in terms of the polarity of the threshold voltage. We also explain that the electrical transport behaviors are associated with the influence of surface states. In addition, we demonstrate the proton irradiation effects on the electrical characteristics of two different types of FET device structures in which the ZnO nanowires are placed on the substrate or suspended above the substrate. The photoluminescence studies of the ZnO nanowires provide substantial evidence that the observed threshold voltage shift in nanowire transistors can be explained by a surface-band-bending through the gate electric field modulation, resulting from the irradiation-induced charges. Finally, as a practical approach, we demonstrate the logic inverter circuits made from the operation mode-controlled ZnO nanowire FETs.

[1]  Randy Hoffman,et al.  Transparent thin-film transistors with zinc indium oxide channel layer , 2005 .

[2]  R. Agarwal,et al.  Heterointerfaces in semiconductor nanowires. , 2008, Small.

[3]  Woojin Park,et al.  Tuning of the electronic characteristics of ZnO nanowire field effect transistors by proton irradiation. , 2010, ACS nano.

[4]  Seong-Ju Park,et al.  Tunable electronic transport characteristics of surface-architecture-controlled ZnO nanowire field effect transistors. , 2008, Nano letters.

[5]  Chung Yin Kwong,et al.  Photoluminescence and Electron Paramagnetic Resonance of ZnO Tetrapod Structures , 2004 .

[6]  Yu Hang Leung,et al.  Optical properties of ZnO nanostructures. , 2006, Small.

[7]  Kwanwoo Shin,et al.  Radiation hardness of the electrical properties of carbon nanotube network field effect transistors under high-energy proton irradiation , 2006, Nanotechnology.

[8]  Hossam Haick,et al.  Tuning the electrical properties of Si nanowire field-effect transistors by molecular engineering. , 2009, Small.

[9]  A. Krasheninnikov,et al.  Engineering of nanostructured carbon materials with electron or ion beams. , 2007, Nature materials.

[10]  Mark E. Welland,et al.  Influence of surface structure on the phonon-assisted emission process in the ZnO nanowires grown on homoepitaxial films , 2009 .

[11]  Yuan Taur,et al.  Fundamentals of Modern VLSI Devices , 1998 .

[12]  N. A. Hastas,et al.  Effect of interface roughness on gate bias instability of polycrystalline silicon thin-film transistors , 2002 .

[13]  Avik W. Ghosh,et al.  Theoretical investigation of surface roughness scattering in silicon nanowire transistors , 2005, cond-mat/0502538.

[14]  Il-Kyu Park,et al.  Realization of highly reproducible ZnO nanowire field effect transistors with n-channel depletion and enhancement modes , 2007 .

[15]  Shui-Tong Lee,et al.  Tunable n‐Type Conductivity and Transport Properties of Ga‐doped ZnO Nanowire Arrays , 2008 .

[16]  Woojin Park,et al.  Logic inverters composed of controlled depletion-mode and enhancement-mode ZnO nanowire transistors , 2009 .

[17]  Peidong Yang,et al.  Nanowire dye-sensitized solar cells , 2005, Nature materials.

[18]  Anna Cavallini,et al.  Franz−Keldysh Effect in GaN Nanowires , 2007 .

[19]  Nitin Kumar,et al.  Nanoscale ZnO‐Enhanced Fluorescence Detection of Protein Interactions , 2006 .

[20]  Henryk Temkin,et al.  Size-dependent surface luminescence in ZnO nanowires , 2004 .

[21]  Hyunsang Hwang,et al.  Hybrid Complementary Logic Circuits of One‐Dimensional Nanomaterials with Adjustment of Operation Voltage , 2009 .

[22]  Yan Li,et al.  Self-aligned ballistic n-type single-walled carbon nanotube field-effect transistors with adjustable threshold voltage. , 2008, Nano letters.

[23]  Woong-Ki Hong,et al.  Electrical Properties of Surface-Tailored ZnO Nanowire Field-Effect Transistors , 2008, IEEE Transactions on Electron Devices.

[24]  D Lincot,et al.  The impact of morphology upon the radiation hardness of ZnO layers , 2008, Nanotechnology.

[25]  Yan Li,et al.  Doping-Free Fabrication of Carbon Nanotube Based Ballistic CMOS Devices and Circuits , 2007 .