论文信息 - Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

Epitaxial InP/fluoride/InP(001) double heterostructures grown by molecular beam epitaxy

We report the first epitaxial semiconductor‐dielectric‐semiconductor (SDS) double heterostructures using the III‐V compound semiconductor InP. The samples, InP/CaF2/InP(001) and InP/BaxSr1−xF2/InP(001), were grown by molecular beam epitaxy and have lattice mismatches of −6.9% and +2.0%, respectively. In situ high‐energy electron diffraction showed that the initial stage of epitaxy of the InP/fluoride structure, unlike that of the fluoride/InP structure, exhibits pseudomorphism. Analysis of the electrical properties of SDS devices with an insulator thickness of ∼100 A indicates both Ohmic and trap‐assisted tunneling conduction.

Charles W. Tu | S. R. Forrest | W. D. Johnston | S. Forrest | C. Tu

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