SiC Substrate Doping Profiles Using Commercial Optical Scanners

Presented is the use of a commercial optical scanner for the mapping of doping density ( ) D N of SiC substrates and as a local probe for D N in different regions. This method provides a fast and cost effective method for determining D N homogeneity, examining local electrical characteristics, and recognizing defect sites including areas of different polytypes or polycrystallinity. Micro-Raman spectroscopy was used to calibrate the transmission intensity with D N . It is shown that features presented in the calculated D N maps strongly correlate to those observed in Lehighton resistivity maps.