Epitaxial growth of topological insulator Bi2Se3 film on Si(111) with atomically sharp interface

[1]  Q. Xue,et al.  Electron interaction-driven insulating ground state in Bi 2 Se 3 topological insulators in the two-dimensional limit , 2010, 1011.1055.

[2]  D. D. Awschalom,et al.  Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B , 2010, 1012.1918.

[3]  Guang Wang,et al.  Atomically smooth ultrathin films of topological insulator Sb2Te3 , 2010 .

[4]  S. Hasegawa,et al.  Anomalous transport in ann-type topological insulator ultrathinBi2Se3film , 2010 .

[5]  Guang Wang,et al.  Intrinsic Topological Insulator Bi2Te3 Thin Films on Si and Their Thickness Limit , 2010, Advanced materials.

[6]  Xi Chen,et al.  Landau quantization of topological surface states in Bi2Se3. , 2010, Physical review letters.

[7]  P. Roushan,et al.  Transmission of topological surface states through surface barriers , 2010, Nature.

[8]  Q. Xue,et al.  Topological insulator Bi2Se3 thin films grown on double-layer graphene by molecular beam epitaxy , 2010, 1007.0809.

[9]  Shuang Jia,et al.  Half-Heusler ternary compounds as new multifunctional experimental platforms for topological quantum phenomena. , 2010, Nature materials.

[10]  N. Bansal,et al.  Crucible aperture: An effective way to reduce source oxidation in oxide molecular beam epitaxy process , 2010, 1104.1120.

[11]  Haiyang Li,et al.  The van der Waals epitaxy of Bi2Se3 on the vicinal Si(111) surface: an approach for preparing high-quality thin films of a topological insulator , 2010, 1005.0449.

[12]  S. Hasegawa,et al.  Spectroscopic evidence of a topological quantum phase transition in ultrathin Bi 2 Se 3 films , 2010 .

[13]  Andrei B. Sushkov,et al.  Strong surface scattering in ultrahigh mobility Bi2Se3 topological insulator crystals , 2010, 1003.2382.

[14]  Joel E Moore,et al.  The birth of topological insulators , 2010, Nature.

[15]  J Chen,et al.  Gate-voltage control of chemical potential and weak antilocalization in Bi₂Se₃. , 2010, Physical review letters.

[16]  H. Takagi,et al.  Momentum-resolved Landau-level spectroscopy of Dirac surface state in Bi 2 Se 3 , 2010, 1003.0100.

[17]  R. Cava,et al.  A new platform for topological quantum phenomena : Topological Insulator states in thermoelectric Heusler-related ternary compounds , 2010, 1003.0155.

[18]  C. Kane,et al.  Topological Insulators , 2019, Electromagnetic Anisotropy and Bianisotropy.

[19]  Wei Zhang,et al.  Quantized Anomalous Hall Effect in Magnetic Topological Insulators , 2010, Science.

[20]  N. Bansal,et al.  Sr flux stability against oxidation in oxide-molecular-beam-epitaxy environment: Flux, geometry, and pressure dependence , 2010, 1104.1117.

[21]  Xiao-Liang Qi,et al.  The quantum spin Hall effect and topological insulators , 2010, 1001.1602.

[22]  Xiao-Liang Qi,et al.  Aharonov-Bohm interference in topological insulator nanoribbons. , 2009, Nature materials.

[23]  Xi Dai,et al.  Crossover of the three-dimensional topological insulator Bi 2 Se 3 to the two-dimensional limit , 2010 .

[24]  X. Dai,et al.  Quintuple-layer epitaxy of thin films of topological insulator Bi2Se3 , 2009 .

[25]  Xi Dai,et al.  Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface , 2009 .

[26]  R. Cava,et al.  Observation of a large-gap topological-insulator class with a single Dirac cone on the surface , 2009 .

[27]  U. Häussermann,et al.  Structure and bonding properties of (Bi2Se3)m(Bi2)n stacks by first-principles density functional theory , 2005 .

[28]  A. Demkov,et al.  Mechanism of cleaning Si(100) surface using Sr or SrO for the growth of crystalline SrTiO3 films , 2002 .

[29]  C. H. Bhosale,et al.  Preparation and characterization of electrodeposited Bi2Se3 thin films from nonaqueous medium , 2001 .

[30]  Sa. K. Narayandass,et al.  Determination of Kinetic Parameters of Bi2Se3 Thin Films by Computation , 2000 .

[31]  C. Lokhande,et al.  Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method , 2000 .

[32]  Y. Qian,et al.  Synthesis and characterization of nanocrystalline Bi2Se3 by solvothermal method , 1999 .

[33]  R. K. Nkum,et al.  Band gap energies of semiconducting sulphides and selenides , 1998 .

[34]  C. H. Bhosale,et al.  Preparation and characterization of electrodeposited Bi2Se3 thin films , 1998 .

[35]  H. Okamoto.  The Bi-Se (Bismuth-Selenium) System , 1994 .

[36]  Atsushi Koma,et al.  Van der Waals epitaxy—a new epitaxial growth method for a highly lattice-mismatched system , 1992 .

[37]  Olmstead,et al.  Bonding of Se and ZnSe to the Si(100) surface. , 1989, Physical review. B, Condensed matter.

[38]  C Wood,et al.  Materials for thermoelectric energy conversion , 1988 .

[39]  Yasuhiro Shiraki,et al.  Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE , 1986 .

[40]  J. Bean.  Recent developments in silicon molecular beam epitaxy , 1983 .

[41]  G. E. Becker,et al.  Acceptor dopants in silicon molecular‐beam epitaxy , 1977 .