Light Particle-Induced Single Event Degradation in SDRAMs

SDRAMs have been exposed to protons, neutrons, alpha particles, heavy ions and Co60 irradiations. Numerous cells exhibit large data retention time degradation that are attributed to single interactions. The physical process leading to the degradation is discussed. The annealing behavior and leakage current order of magnitude are compatible with the properties, stability and emission rate of clusters of defects in the silicon

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