Lamp-heated rapid vapor-phase doping technology for 100-GHz Si bipolar transistors
暂无分享,去创建一个
[1] M. Soyuer,et al. A 200 mm SiGe-HBT BiCMOS technology for mixed signal applications , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.
[2] Katsuyoshi Washio,et al. Self-aligned metal/IDP Si bipolar technology featuring 14 ps/70 GHz , 1995, Proceedings of International Electron Devices Meeting.
[3] Y. Kiyota,et al. Ultrashallow p-type layer formation by rapid vapor-phase doping using a lamp annealing apparatus , 1994 .
[4] T. Suzaki,et al. A self-aligned SiGe base bipolar technology using cold wall UHV/CVD and its application to optical communication ICs , 1995, Proceedings of Bipolar/Bicmos Circuits and Technology Meeting.
[5] Toshiyuki Kikuchi,et al. Very-high-speed silicon bipolar transistors with in-situ doped polysilicon emitter and rapid vapor-phase doping base , 1995 .