论文信息 - 30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

30 GHz static frequency divider using a 0.2 /spl mu/m AlGaAs/GaAs/AlGaAs HEMT technology

A frequency divider chip based on AlGaAs/GaAs/AlGaAs quantum well FETs with 0.2 /spl mu/m gate length has been developed and fabricated. The divider can be operated up to 30 GHz with a single-ended input signal at an input resistance of 50 /spl Omega/. The output signals are differential with both internal load resistances at 50 /spl Omega/.

[1] Paul M. Chirlian. Analysis and design of integrated electronic circuits , 1980 .

[2] M. Hafizi,et al. 39.5-GHz static frequency divider implemented in AlInAs/GaInAs HBT technology , 1992, IEEE Electron Device Letters.

[3] Manfred Berroth,et al. High-frequency equivalent circuit of GaAs FETs for large-signal applications , 1991 .

[4] A. Thiede,et al. An 18-34-GHz dynamic frequency divider based on 0.2- mu m AlGaAs/GaAs/AlGaAs quantum-well transistors , 1993 .