论文信息 - Multiplication noise in multi-heterostructure avalanche photodiodes

Multiplication noise in multi-heterostructure avalanche photodiodes

Abstract Using a multi-feedback network representation, multiplication noise in two-stage and three-stage heterostructure avalanche photodiodes has been calculated for different degrees of carrier feedback over heterobarriers. Results show appreciable dependence of noise on carrier feedback in III–V compound APD's, the effect being less with larger number of stages.

N. B. Chakraborti | S. Rakshit | R. Sarin

[1] Karl Hess,et al. Impact ionisation in multilayered heterojunction structures , 1980 .

[2] Federico Capasso,et al. New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions , 1982 .

[3] F. Capasso. The channeling avalanche photodiode: A novel ultra-low-noise interdigitated p-n junction detector , 1982, IEEE Transactions on Electron Devices.

[4] F. Capasso,et al. The graded bandgap multilayer avalanche photodiode: A new low-noise detector , 1982, IEEE Electron Device Letters.

[5] Amnon Yariv,et al. Single-carrier-type dominated impact ionisation in multilayer structures , 1982 .

[6] Federico Capasso,et al. Enhancement of electron impact ionization in a superlattice: A new avalanche photodiode with a large ionization rate ratio , 1982 .