论文信息 - Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- and Double-Molecule Spin Crossover Nanogap Devices - 字舞流文

Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single- and Double-Molecule Spin Crossover Nanogap Devices

C. Marrows | J. Massey | Ivan Šalitroš | N. Kemp | Barbora Brachňaková | A. H. Jaafar | A. Gee