论文信息 - Analysis of interface trap parameters from double‐peak conductance spectra taken on N‐implanted 3C‐SiC MOS capacitors - 字舞流文

Analysis of interface trap parameters from double‐peak conductance spectra taken on N‐implanted 3C‐SiC MOS capacitors

H. B. Weber | M. Abe | G. Pensl | T. Frank | M. Krieger | A. Schöner | H. Nagasawa | S. Beljakowa | N. Hatta | L. Trapaidze