GaInNAs(Sb) vertical-cavity surface-emitting lasers at 1.460 μm

We demonstrate a top emitting, electrically pumped, GaInNAsSb vertical-cavity surface-emitting laser (VCSEL) grown monolithically on GaAs, lasing pulsed at a wavelength of 1.460 μm, at a chuck temperature of −10 °C, with a threshold current of 550 mA (16 kA/cm2) and a duty cycle of 0.1% for large mesas. Dilute nitrides, such as GaInNAs, have proven effective for lasers operating at 1.31 μm, but reaching longer wavelengths has proven difficult due to defects from low-temperature growth, surface roughening, and nitrogen-related defects. Reduction of oxygen contamination and careful attention to plasma conditions allow a similar extension to laser wavelength, by minimizing crystal defects introduced during growth. This is the first VCSEL on GaAs beyond 1.31 μm to date.