High-Al-content heterostructures and devices
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A. Allerman | M. Crawford | A. Baca | S. Reza | R. Kaplar | E. Douglas | B. Klein
[1] Kyle J. Liddy,et al. RF Power Performance of Sc(Al,Ga)N/GaN HEMTs at Ka-Band , 2020, IEEE Electron Device Letters.
[2] S. Rajan,et al. Al0.65Ga0.35N/Al0.4Ga0.6N Micro-Channel Heterojunction Field Effect Transistors With Current Density Over 900 mA/mm , 2020, IEEE Electron Device Letters.
[3] S. Rajan,et al. All MOCVD grown Al0.7Ga0.3N/Al0.5Ga0.5N HFET: An approach to make ohmic contacts to Al-rich AlGaN channel transistors , 2020 .
[4] S. Rajan,et al. BaTiO3/Al0.58Ga0.42N lateral heterojunction diodes with breakdown field exceeding 8 MV/cm , 2020 .
[5] F. Ren,et al. Plasma etching of wide bandgap and ultrawide bandgap semiconductors , 2020 .
[6] G. Simin,et al. Ultra-wide bandgap AlGaN metal oxide semiconductor heterostructure field effect transistors with high-k ALD ZrO2 dielectric , 2019, Semiconductor Science and Technology.
[7] A. Allerman,et al. Saturation Velocity Measurement of Al0.7Ga0.3N-Channel High Electron Mobility Transistors , 2019, Journal of Electronic Materials.
[8] T. Palacios,et al. Nitrogen-Polar Polarization-Doped Field-Effect Transistor Based on Al0.8Ga0.2N/AlN on SiC With Drain Current Over 100 mA/mm , 2019, IEEE Electron Device Letters.
[9] S. Rajan,et al. Al0.75Ga0.25N/Al0.6Ga0.4N heterojunction field effect transistor with fT of 40 GHz , 2019, Applied Physics Express.
[10] Jordan Merkel,et al. The Super-Lattice Castellated Field-Effect Transistor: A High-Power, High-Performance RF Amplifier , 2019, IEEE Electron Device Letters.
[11] Yu Cao,et al. ScAlN/GaN High-Electron-Mobility Transistors With 2.4-A/mm Current Density and 0.67-S/mm Transconductance , 2019, IEEE Electron Device Letters.
[12] A. Allerman,et al. High-frequency, high-power performance of AlGaN-channel high-electron-mobility transistors: an RF simulation study , 2019, Japanese Journal of Applied Physics.
[13] P. Kotula,et al. Operation Up to 500 °C of Al0.85Ga0.15N/Al0.7Ga0.3N High Electron Mobility Transistors , 2019, IEEE Journal of the Electron Devices Society.
[14] A. Allerman,et al. Enhancement-mode Al0.85Ga0.15N/Al0.7Ga0.3N high electron mobility transistor with fluorine treatment , 2019, Applied Physics Letters.
[15] A. Allerman,et al. Enhancement-mode AlGaN channel high electron mobility transistor enabled by p-AlGaN gate , 2019, Journal of Vacuum Science & Technology B.
[16] Albert G. Baca,et al. Stability in Fluorine-Treated Al-Rich High Electron Mobility Transistors with 85% Al-Barrier Composition , 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).
[17] A. Allerman,et al. AlGaN polarization-doped field effect transistor with compositionally graded channel from Al0.6Ga0.4N to AlN , 2019, Applied Physics Letters.
[18] A. Coleman,et al. RF operation in graded Al x Ga 1− x N ( x = 0.65 to 0.82) channel transistors , 2018, Electronics Letters.
[19] G. Simin,et al. Doped Barrier Al0.65Ga0.35N/Al0.40Ga0.60N MOSHFET With SiO2 Gate-Insulator and Zr-Based Ohmic Contacts , 2018, IEEE Electron Device Letters.
[20] A. Allerman,et al. Ultra-wide band gap AlGaN polarization-doped field effect transistor , 2018, Japanese Journal of Applied Physics.
[21] E. Viveiros,et al. Diamond RF Transistor Technology with ft=41 GHz and fmax=44 GHz , 2018, 2018 IEEE/MTT-S International Microwave Symposium - IMS.
[22] A. Allerman,et al. High Al-Content AlGaN Transistor With 0.5 A/mm Current Density and Lateral Breakdown Field Exceeding 3.6 MV/cm , 2018, IEEE Electron Device Letters.
[23] S. Haigh,et al. Atomic-Scale Insights into the Oxidation of Aluminum. , 2018, ACS applied materials & interfaces.
[24] M. Islam,et al. Ultrawide‐Bandgap Semiconductors: Research Opportunities and Challenges , 2017 .
[25] J. Kuzmík,et al. Investigation of ‘surface donors’ in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructures: Correlation of electrical, structural, and chemical properties , 2017 .
[26] M. Coltrin,et al. Analysis of 2D Transport and Performance Characteristics for Lateral Power Devices Based on AlGaN Alloys , 2017 .
[27] A. Uedono,et al. AlN metal–semiconductor field-effect transistors using Si-ion implantation , 2017 .
[28] Matthew J. Marinella,et al. Evaluation of a “Field Cage” for Electric Field Control in GaN-Based HEMTs That Extends the Scalability of Breakdown Into the kV Regime , 2017, IEEE Transactions on Electron Devices.
[29] S. Rajan,et al. Graded AlGaN Channel Transistors for Improved Current and Power Gain Linearity , 2017, IEEE Transactions on Electron Devices.
[30] G. Simin,et al. High Electron Mobility Transistors With Al0.65Ga0.35N Channel Layers on Thick AlN/Sapphire Templates , 2017, IEEE Electron Device Letters.
[31] Zbigniew Galazka,et al. $\beta$ -Ga2O3 MOSFETs for Radio Frequency Operation , 2017, IEEE Electron Device Letters.
[32] Jason C. Neely,et al. Generation-After-Next Power Electronics: Ultrawide-bandgap devices, high-temperature packaging, and magnetic nanocomposite materials , 2017, IEEE Power Electronics Magazine.
[33] A. Allerman,et al. Inductively coupled BCl3/Cl2/Ar plasma etching of Al-rich AlGaN , 2017 .
[34] S. Rajan,et al. AlGaN Channel Field Effect Transistors with Graded Heterostructure Ohmic Contacts , 2016, 1608.06686.
[35] A. Allerman,et al. An AlN/Al0.85Ga0.15N high electron mobility transistor , 2016 .
[36] Jonathan J. Wierer,et al. Al0 .3Ga0.7N PN diode with breakdown voltage >1600 V , 2016 .
[37] F. Wang,et al. Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges , 2016, IEEE Journal of Emerging and Selected Topics in Power Electronics.
[38] K. Yamane,et al. Investigation of HCl-based surface treatment for GaN devices , 2016 .
[39] D. Jena,et al. High breakdown single-crystal GaN p-n diodes by molecular beam epitaxy , 2015 .
[40] J. Khurgin,et al. Density-dependent electron transport and precise modeling of GaN high electron mobility transistors , 2015, 1508.07050.
[41] Bing Xiong,et al. Smooth etching of epitaxially grown AlN film by Cl2/BCl3/Ar-based inductively coupled plasma , 2015 .
[42] S. Rajan,et al. Modeling of High Composition AlGaN Channel HEMTs with Large Threshold Voltage , 2014, 1411.1447.
[43] Gaudenzio Meneghesso,et al. Breakdown mechanisms in AlGaN/GaN HEMTs: An overview , 2014 .
[44] M. Suita,et al. AlGaN Channel HEMT With Extremely High Breakdown Voltage , 2013, IEEE Transactions on Electron Devices.
[45] S. Hashimoto,et al. High Al Composition AlGaN-Channel High-Electron-Mobility Transistor on AlN Substrate , 2010 .
[46] Kevin J. Chen,et al. Self-aligned enhancement-mode AlGaN/GaN HEMTs using 25 keV fluorine ion implantation , 2010, 68th Device Research Conference.
[47] Hongwei Chen,et al. Effects of the fluorine plasma treatment on the surface potential and Schottky barrier height of AlxGa1−xN/GaN heterostructures , 2010 .
[48] P. Dudek,et al. Comparative study of NH4OH and HCl etching behaviours on AlGaN surfaces , 2010 .
[49] Debdeep Jena,et al. Polarization-Induced Hole Doping in Wide–Band-Gap Uniaxial Semiconductor Heterostructures , 2010, Science.
[50] Y. Aoyagi,et al. AlGaN channel HEMTs on AlN buffer layer with sufficiently low off-state drain leakage current , 2009 .
[51] Y. Aoyagi,et al. Remarkable breakdown voltage enhancement in AlGaN channel high electron mobility transistors , 2008 .
[52] Umesh K. Mishra,et al. GaN-Based RF Power Devices and Amplifiers , 2008, Proceedings of the IEEE.
[53] Wei Huang,et al. Reliability of Enhancement-mode AlGaN/GaN HEMTs Fabricated by Fluorine Plasma Treatment , 2007, 2007 IEEE International Electron Devices Meeting.
[54] K. Kumakura,et al. High Critical Electric Field Exceeding 8 MV/cm Measured Using an AlGaN p–i–n Vertical Conducting Diode on n-SiC Substrate , 2006 .
[55] Yugang Zhou,et al. Control of Threshold Voltage of AlGaN/GaN HEMTs by Fluoride-Based Plasma Treatment: From Depletion Mode to Enhancement Mode , 2006, IEEE Transactions on Electron Devices.
[56] Chang-I. Kim,et al. The etching properties of Al2O3 thin films in N2/Cl2/BCl3 and Ar/Cl2/BCl3 gas chemistry , 2005 .
[57] A. Huang. New unipolar switching power device figures of merit , 2004, IEEE Electron Device Letters.
[58] Z. Hao,et al. Nonselective and smooth etching of GaN/AlGaN heterostructures by Cl2/Ar/BCl3 inductively coupled plasmas , 2004 .
[59] Umesh K. Mishra,et al. Origin of etch delay time in Cl2 dry etching of AlGaN/GaN structures , 2003 .
[60] E. Santi,et al. An assessment of wide bandgap semiconductors for power devices , 2003 .
[61] T. Mimura,et al. The early history of the high electron mobility transistor (HEMT) , 2002 .
[62] Giovanni Ghione,et al. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries , 2001 .
[63] Michael S. Shur,et al. Enhancement mode AlGaN/GaN HFET with selectively grown pn junction gate , 2000 .
[64] Lester F. Eastman,et al. Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures , 1999 .
[65] Luke F. Lester,et al. Selective inductively coupled plasma etching of group-III nitrides in Cl2- and BCl3-based plasmas , 1998 .
[66] Robert F. Davis,et al. Cleaning of AlN and GaN surfaces , 1998 .
[67] K.H.G. Duh,et al. Millimeter-wave low-noise high electron mobility transistors , 1985, IEEE Electron Device Letters.
[68] W. Wiegmann,et al. Two-dimensional electron gas at a semiconductor-semiconductor interface , 1979 .
[69] A. Allerman,et al. RF Performance of Al 0.85 Ga 0.15 N/Al 0.70 Ga 0.30 N High Electron Mobility Transistors With 80-nm Gates , 2019 .
[70] A. Allerman,et al. RF Performance of Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors With 80-nm Gates , 2019, IEEE Electron Device Letters.
[71] A. Allerman,et al. Al0.85Ga0.15N/Al0.70Ga0.30N High Electron Mobility Transistors with Schottky Gates and Large On/Off Current Ratio over Temperature , 2017 .
[72] A. Allerman,et al. Review—Ultra-Wide-Bandgap AlGaN Power Electronic Devices , 2017 .
[73] P. Kotula,et al. Planar Ohmic Contacts to Al0.45Ga0.55N/Al0.3Ga0.7N High Electron Mobility Transistors , 2017 .
[74] E. Johnson. Physical limitations on frequency and power parameters of transistors , 1965 .