Characterization of SiC MOSFET dual modules for future use in railway traction chains

Silicon (Si) IGBTs are widely used in railway traction converters. In the near future, Silicon Carbide (SiC) technology will push the limits of switching devices in the three directions: higher blocking voltage, higher operating temperature and higher switching speed. Today, the first Silicon Carbide (SiC) MOSFET modules are available on the market and look promising. Although they are still limited in breakdown voltage, these large-gap components should improve the traction chain efficiency. Particularly a significant reduction on the switching losses is expected which should lead to improve the power-weight ratio.