A wide-band-gap p-type thermoelectric material based on quaternary chalcogenides of Cu2ZnSnQ4 (Q=S,Se)

Chalcopyritelike quaternary chalcogenides, Cu2ZnSnQ4 (Q=S,Se), were investigated as an alternative class of wide-band-gap p-type thermoelectric materials. Their distorted diamondlike structure and quaternary compositions are beneficial to lowering lattice thermal conductivities. Meanwhile, partial substitution of Cu for Zn creates more charge carriers and conducting pathways via the CuQ4 network, enhancing electrical conductivity. The power factor and the figure of merit (ZT) increase with the temperature, making these materials suitable for high temperature applications. For Cu2.1Zn0.9SnQ4, ZT reaches about 0.4 at 700 K, rising to 0.9 at 860 K.

[1]  J. M. Stewart,et al.  Kesterite, Cu<2) (Zn,Fe)SnS<4) , and stannite, Cu<2) (Fe,Zn)SnS<4) , structurally similar but distinct minerals , 1978 .

[2]  V. Raja,et al.  Effect of post-deposition annealing on the growth of Cu2ZnSnSe4 thin films for a solar cell absorber layer , 2008 .

[3]  J. Ibers,et al.  Syntheses, crystal and electronic structure, and some optical and transport properties of LnCuOTe (Ln=La, Ce, Nd) , 2007 .

[4]  C. Keffer,et al.  PbTe Debye-Waller Factors and Band-Gap Temperature Dependence , 1968 .

[5]  Xinbing Zhao,et al.  Thermoelectric properties of nonstoichiometric PbTe prepared by HPHT , 2009 .

[6]  A. Katsui,et al.  Thermal analysis and synthesis from the melts of Cu-based quaternary compounds Cu–III–IV–VI4 and Cu2–II–IV–VI4 (II=Zn, Cd; III=Ga, In; IV=Ge, Sn; VI=Se) , 2000 .

[7]  Fuqiang Huang,et al.  Optical and electrical properties study on p-type conducting CuAlS2+x with wide band gap , 2007 .

[8]  G. Schmidt,et al.  Phase relations and optical properties of semiconducting ternary sulfides in the system Cu–Sn–S , 2003 .

[9]  W. Schäfer,et al.  Tetrahedral quaternary chalcogenides of the type Cu2IIIVS4(Se4) , 1974 .

[10]  P. Pécheur,et al.  Electronic structure and bonding in bismuth telluride , 1989 .

[11]  George S. Nolas,et al.  Thermoelectrics: Basic Principles and New Materials Developments , 2001 .

[12]  L. Piskach,et al.  Phase equilibria in the Cu2SnSe3–SnSe2–ZnSe system , 2003 .

[13]  G. Mahan,et al.  Electronic structure of CoSb 3 : A narrow-band-gap semiconductor , 1998 .

[14]  Guifeng Li,et al.  p-type transparent conductor: Zn-doped CuAlS2 , 2007 .

[15]  Y. Hashimoto,et al.  CuAlS2 Thin-Films Prepared by Sulfurization of Metallic Precursors and their Properties , 2004 .

[16]  Fuqiang Huang,et al.  p-Type electrical conduction and wide optical band gap in Mg-doped CuAlS2 , 2008 .

[17]  C. Rincón,et al.  Crystal growth and structure, electrical, and optical characterization of the semiconductor Cu2SnSe3 , 2001 .

[18]  B. Munir,et al.  Pulsed laser deposition of quaternary Cu2ZnSnSe4 thin films , 2007 .