Stable, high quantum efficiency, UV-enhanced silicon photodiodes by arsenic diffusion

Abstract Very high quantum efficiency, UV-enhanced silicon photodiodes have been developed by arsenic diffusion into p -type silicon as an alternative to the inversion layer photodiodes commonly used in precise radiometric and spectroscopic measurements. The fabricated diodes had an unbiased internal quantum efficiency that was 100% from 350 to 550 nm, and that exceeded 100% at shorter wavelengths. A typical responsivity at 200 nm was 0.1 A/W. No degradation in responsivity was detected anywhere in the 200–1100 nm range when these devices were exposed to 20 mW/cm 2 of 254 nm radiation for 60 days. Thus the theoretical maximum value of internal quantum efficiency for a diffused photodiode appears to have been achieved in the UV and short wavelength visible, without compromising the diode's long term stability. This is in marked contrast to older types of diffused photodiodes, which either were “dead” in the UV, or exhibited a spectral response vs flux characteristic that changed considerably with UV exposure.

[1]  T. Mukai,et al.  Silicon p-n junction photodiodes sensitive to ultraviolet radiation , 1979, IEEE Transactions on Electron Devices.

[2]  W. V. Munch.  Double-Junction Photosensitive Devices with High uv Responsivity , 1977 .

[3]  J. Geist,et al.  New calculations of the quantum yield of silicon in the near ultraviolet , 1983 .

[4]  F. Lindholm,et al.  Quantum yield of metal‐semiconductor photodiodes , 1972 .

[5]  R. L. Booker,et al.  Induced junction (inversion layer) photodiode self-calibration. , 1984, Applied optics.

[6]  Savvas G. Chamberlain,et al.  New profiled silicon photodetector for improved short‐wavelength quantum efficiency , 1979 .

[7]  S. M. Hu,et al.  Dislocations in thermally stressed silicon wafers , 1973 .

[8]  J. Gardner,et al.  Response time and linearity of inversion layer silicon photodiodes. , 1985, Applied optics.

[9]  A. Russell Schaefer,et al.  Complete collection of minority carriers from the inversion layer in induced junction diodes , 1981 .

[10]  A. R. Schaefer,et al.  Silicon detector nonlinearity and related effects. , 1983, Applied optics.

[11]  B. Furman,et al.  Thermal redistribution of oxygen during solid‐phase regrowth of arsenic‐implanted amorphized Si , 1981 .

[12]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[13]  J. Verdebout.  Semiquantitative model for the oxide bias experiment and its application to the study of p+ nn+ photodiode degradation. , 1984, Applied optics.

[14]  J. Dziewior,et al.  Auger coefficients for highly doped and highly excited silicon , 1977 .

[15]  T. Hansen,et al.  Silicon UV-Photodiodes Using Natural Inversion Layers , 1978 .

[16]  C. R. Helms,et al.  Studies of Phosphorus Pile‐Up at the Si ‐ SiO2 Interface Using Auger Sputter Profiling , 1981 .

[17]  Jon Geist,et al.  Silicon photodiode front region collection efficiency models , 1980 .