Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
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Zeyu Zhang | John E. Bowers | Arthur C. Gossard | Daehwan Jung | Justin Norman | Robert W. Herrick | Yating Wan | M. J. Kennedy | Catherine Jan | J. Bowers | A. Gossard | Zeyu Zhang | M. Kennedy | J. Norman | Y. Wan | D. Jung | R. Herrick | Pari Patel | Katherine Turnlund | C. Jan | Pari Patel | Katherine Turnlund
[1] Wolfgang Stolz,et al. Heteroepitaxy of GaP on Si: Correlation of morphology, anti-phase-domain structure and MOVPE growth conditions , 2008 .
[2] Daniel T. Cassidy,et al. Technique for measurement of the gain spectra of semiconductor diode lasers , 1984 .
[3] Di Liang,et al. Reliability of Hybrid Silicon Distributed Feedback Lasers , 2013, IEEE Journal of Selected Topics in Quantum Electronics.
[4] Luke F. Lester,et al. Ground-state emission and gain in ultralow-threshold InAs-InGaAs quantum-dot lasers , 2001 .
[5] Peter A. Andrekson,et al. Novel technique for determining internal loss of individual semiconductor lasers , 1992 .
[6] S. Pearton,et al. Antiphase domains in GaAs grown by metalorganic chemical vapor deposition on silicon‐on‐insulator , 1988 .
[7] Dennis G. Deppe,et al. 1.3 μm InAs quantum dot laser with To=161 K from 0 to 80 °C , 2002 .
[8] John E. Bowers,et al. High performance continuous wave 1.3 μm quantum dot lasers on silicon , 2014 .
[9] John E. Bowers,et al. Reliability of InAs/GaAs Quantum Dot Lasers Epitaxially Grown on Silicon , 2015, IEEE Journal of Selected Topics in Quantum Electronics.
[10] H. Casey,et al. GaAs–AlxGa1−xAs heterostructure laser with separate optical and carrier confinement , 1974 .
[11] Alan Y. Liu,et al. 1 . 3 μ m submilliamp threshold quantum dot micro-lasers on , 2017 .
[12] R. Cingolani,et al. Enhanced modal gain of multilayer InAs∕InGaAs∕GaAs quantum dot lasers emitting at 1300nm , 2006 .
[13] Kei May Lau,et al. Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. , 2017, Optics express.
[14] John E. Bowers,et al. High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si , 2017 .
[15] Rudolf F. Kazarinov,et al. ADVANCES IN MEASUREMENTS OF PHYSICAL PARAMETERS OF SEMICONDUCTOR LASERS , 1998 .
[16] G. Shtengel,et al. Internal optical loss measurements in 1.3 μm InGaAsP lasers , 1995 .
[17] Jens H. Schmid,et al. Roadmap on silicon photonics , 2016 .
[18] R. Cingolani,et al. High efficiency and high modal gain InAs/InGaAs/GaAs quantum dot lasers emitting at 1300 nm , 2007 .