Relation between the dislocations in chemically vapour-deposited diamond and the linewidth of the Raman spectrum

[1]  R. Hauge,et al.  Nanometer‐scale morphology of homoepitaxial diamond films by atomic force microscopy , 1992 .

[2]  R. Hauge,et al.  Mechanism of diamond growth by chemical vapor deposition on diamond (100), (111), and (110) surfaces: Carbon‐13 studies , 1991 .

[3]  N. Fujimori,et al.  Epitaxially Grown Diamond (001) 2×1/1×2 Surface Investigated by Scanning Tunneling Microscopy in Air , 1991 .

[4]  S. Karasawa,et al.  Diamond crystal growth on silicon and its interfacial characterization , 1990 .

[5]  R. Hauge,et al.  Mechanism of diamond film growth by hot-filament CVD: Carbon-13 studies , 1990 .

[6]  Collins,et al.  Indirect energy gap of 13C diamond. , 1990, Physical review letters.

[7]  W. V. Enckevort,et al.  Rapid single crystalline diamond growth by acetylene-oxygen flame deposition , 1990 .

[8]  N. Fujimori,et al.  Epitaxial Growth of High Quality Diamond Film by the Microwave Plasma-Assisted Chemical-Vapor-Deposition Method , 1990 .

[9]  K. Okano,et al.  Synthesis of B-doped diamond film , 1990 .

[10]  S. Karasawa,et al.  Growth of diamond thin films on silicon and TEM observation of the interface , 1990 .

[11]  K. Okano,et al.  Characterization of Boron-Doped Diamond Film , 1989 .

[12]  N. Fujimori,et al.  Electrical Characteristics of Metal Contacts to Boron-Doped Diamond Epitaxial Film , 1989 .

[13]  Yoichiro Sato,et al.  Epitaxial growth of diamond on diamond substrate by plasma assisted CVD , 1988 .

[14]  R. M. Chrenko.  13C‐doped diamond: Raman spectra , 1988 .

[15]  B. Derjaguin,et al.  Vapor growth of diamond on diamond and other surfaces , 1981 .

[16]  A. P. Zakharov,et al.  Structure of autoepitaxial diamond films , 1975 .