Drift-Free pH Detection With Silicon Nanowire Field-Effect Transistors

The drift of drain current (ID) in silicon nanowire field-effect transistor sensors is analyzed under various conditions of pHs and liquid gate voltages (VLG). It is found that H+ penetration into Helmholtz layer or sensing insulator is the cause of the current drift. To suppress the drift, a novel and fast measurement method with a two-step VLG is proposed and demonstrated. The drift could be completely suppressed by controlling the duration of the first step pulse. The time required to remove the ID drift is significantly reduced by the proposed method, from ~1200 s to below 100 s on average.

[1]  L. Bousse,et al.  The role of buried OH sites in the response mechanism of inorganic-gate pH-sensitive ISFETs , 1984 .

[2]  P. Woias,et al.  Slow pH response effects of silicon nitride ISFET sensors , 1998 .

[3]  S. P. Fodor,et al.  High density synthetic oligonucleotide arrays , 1999, Nature Genetics.

[4]  Y. Nemirovsky,et al.  Low frequency noise and drift in Ion Sensitive Field Effect Transistors , 2000 .

[5]  S. Jamasb.  An analytical technique for counteracting drift in ion-selective field effect transistors (ISFETs) , 2004, IEEE Sensors Journal.

[6]  A. E. Navarro,et al.  ISFET drawbacks minimization using a novel electronic compensation , 2004 .

[7]  Yael Nemirovsky,et al.  CMOS readout circuitry for ISFET microsystems , 2004 .

[8]  Zhiqiang Gao,et al.  Nanoparticles in biomolecular detection , 2006 .

[9]  A. J. Nijdam,et al.  Nanotechnologies for biomolecular detection and medical diagnostics. , 2006, Current opinion in chemical biology.

[10]  Rui Zhang,et al.  Real-Time, Label-Free Detection of Biological Entities Using Nanowire-Based FETs , 2008, IEEE Transactions on Nanotechnology.

[11]  P. K. Chan,et al.  An Intelligent ISFET Sensory System With Temperature and Drift Compensation for Long-Term Monitoring , 2008, IEEE Sensors Journal.

[12]  I. Park,et al.  Top-down fabricated silicon nanowire sensors for real-time chemical detection , 2010, Nanotechnology.

[13]  Chia-Hung Lin,et al.  A Novel pH-dependent Drift Improvement Method for Zirconium Dioxide Gated pH-Ion Sensitive Field Effect Transistors , 2010, Sensors.

[14]  H. Park,et al.  CMOS-based biosensors with an independent double-gate FinFET , 2011, 2011 International Electron Devices Meeting.

[15]  Byung-Gook Park,et al.  Complementary Silicon Nanowire Hydrogen Ion Sensor With High Sensitivity and Voltage Output , 2012, IEEE Electron Device Letters.

[16]  Chia-Hua Ho,et al.  A CMOS-Compatible Poly-Si Nanowire Device with Hybrid Sensor/Memory Characteristics for System-on-Chip Applications , 2012, Sensors.

[17]  D. Welch,et al.  Experimental and Simulated Cycling of ISFET Electric Fields for Drift Reset , 2013, IEEE Electron Device Letters.

[18]  D. M. Kim,et al.  SiNW-CMOS Hybrid Common-Source Amplifier as a Voltage-Readout Hydrogen Ion Sensor , 2013, IEEE Electron Device Letters.