Current gain rolloff in graded-base SiGe heterojunction bipolar transistors
暂无分享,去创建一个
J. Cressler | J. Comfort | E. Crabbé | G. Patton | J. Stork | J. Sun | J.D. Cressler | G.L. Patton | J.Y.-C. Sun | E.F. Crabbe | J.H. Comfort | J.M. Stork
[1] Judy L. Hoyt,et al. Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors , 1989 .
[2] E. M. Buturla,et al. Finite-element analysis of semiconductor devices: the FIELDAY program , 1981 .
[3] Herbert Kroemer,et al. Two integral relations pertaining to the electron transport through a bipolar transistor with a nonuniform energy gap in the base region , 1985 .
[4] I. Getreu,et al. Modeling the bipolar transistor , 1978 .
[6] D. Harame,et al. 75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors , 1990, IEEE Electron Device Letters.
[7] P. E. Cottrell,et al. Velocity Saturation in the Collector of Si/Ge,Si,-./Si HBT's , 1990 .
[8] Velocity saturation in the collector of Si/Ge/sub x/Si/sub 1-x//Si HBT's , 1990, IEEE Electron Device Letters.
[9] J.M.C. Stork,et al. 55 Ghz Polysilicon-Emitter Graded Sige-Base Pnp Transistors , 1991, 1991 Symposium on VLSI Technology.
[10] J. Comfort,et al. Low temperature operation of Si and SiGe bipolar transistors , 1990, International Technical Digest on Electron Devices.
[11] J.M.C. Stork,et al. Profile leverage in self-aligned epitaxial Si or SiGe base bipolar technology , 1990, International Technical Digest on Electron Devices.
[12] J.M.C. Stork,et al. 73-GHz self-aligned SiGe-base bipolar transistors with phosphorus-doped polysilicon emitters , 1992, IEEE Electron Device Letters.