InAs QDs on (111)-faceted Si (001) hollow substrates with strong emission at 1300 nm and 1550 nm

Highly uniform (111)-faceted Si sawtooth with underlying hollow structures is formed by homo-epitaxy on a U-shape patterned Si (001) substrate. With in-situ III-V growth on such substrates by the III-V/IV dual chamber molecular beam epitaxy, a high-quality GaAs layer is obtained with threading dislocation density approximately ~ 106 cm−2 via electron channeling contrast image (ECCI) method. Strong room-temperature emission of InAs/GaAs and InAs/InGaAs quantum dots (QDs) at O-band (1300 nm) and C/L-band (1550 nm) telecommunication wavelengths are both achieved on Si (001) substrates.

[1]  Niamh Waldron,et al.  Selective metal-organic chemical vapor deposition growth of high quality GaAs on Si(001) , 2014 .

[2]  Di Liang,et al.  Recent progress in lasers on silicon , 2010 .

[3]  Zheng,et al.  Carrier relaxation and thermal activation of localized excitons in self-organized InAs multilayers grown on GaAs substrates. , 1996, Physical review. B, Condensed matter.

[4]  A. Rickman.  The commercialization of silicon photonics , 2014, Nature Photonics.

[5]  Ashok V. Krishnamoorthy,et al.  Silicon photonics: Energy-efficient communication , 2011 .

[6]  Shinsuke Tanaka,et al.  High-output-power, single-wavelength silicon hybrid laser using precise flip-chip bonding technology. , 2012, Optics express.

[7]  Hong Liu,et al.  The emerging optical data center , 2011, 2011 Optical Fiber Communication Conference and Exposition and the National Fiber Optic Engineers Conference.

[8]  Kei May Lau,et al.  Optically pumped 1.3  μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon. , 2016, Optics letters.

[9]  Qi Jiang,et al.  InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si, Ge, and Ge-on-Si Substrates , 2013, IEEE Journal of Selected Topics in Quantum Electronics.

[10]  Yasuhiko Arakawa,et al.  Direct modulation of 1.3 μm quantum dot lasers on silicon at 60 °C. , 2016, Optics express.

[11]  Ting Wang,et al.  C/L-band emission of InAs QDs monolithically grown on Ge substrate , 2017 .

[12]  M. Carroll,et al.  Defect reduction of GaAs epitaxy on Si (001) using selective aspect ratio trapping , 2007 .

[13]  John E. Bowers,et al.  High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si , 2017 .

[14]  Alwyn J. Seeds,et al.  1.3-μm InAs/GaAs quantum-dot laser monolithically grown on Si Substrates operating over 100°C , 2014 .

[15]  A. Seeds,et al.  Optimizations of Defect Filter Layers for 1.3-μm InAs/GaAs Quantum-Dot Lasers Monolithically Grown on Si Substrates , 2011, IEEE Journal of Selected Topics in Quantum Electronics.

[16]  Kei May Lau,et al.  Room-temperature electrically-pumped 1.5 μm InGaAs/InAlGaAs laser monolithically grown on on-axis (001) Si. , 2018, Optics express.

[17]  Kei May Lau,et al.  InAs/GaAs quantum dots on GaAs-on-V-grooved-Si substrate with high optical quality in the 1.3 μm band , 2015 .

[18]  J. Bowers,et al.  Large-Area Direct Hetero-Epitaxial Growth of 1550-nm InGaAsP Multi-Quantum-Well Structures on Patterned Exact-Oriented (001) Silicon Substrates by Metal Organic Chemical Vapor Deposition , 2018, Journal of Electronic Materials.

[19]  John E. Bowers,et al.  Low threading dislocation density GaAs growth on on-axis GaP/Si (001) , 2017 .

[20]  Kei May Lau,et al.  Growing antiphase-domain-free GaAs thin films out of highly ordered planar nanowire arrays on exact (001) silicon , 2015 .

[21]  Kei May Lau,et al.  Electrically pumped continuous wave quantum dot lasers epitaxially grown on patterned, on-axis (001) Si. , 2017, Optics express.

[22]  Kei May Lau,et al.  Continuous-Wave Optically Pumped 1.55 μm InAs/InAlGaAs Quantum Dot Microdisk Lasers Epitaxially Grown on Silicon , 2017 .

[23]  Wei Li,et al.  Electrically pumped continuous-wave III–V quantum dot lasers on silicon , 2016, Nature Photonics.