Inter-laboratory comparison of CMOS distortion measurements

We describe a measurement comparison of distortion in a complementary metal-oxide semiconductor low-noise device operating under weakly nonlinear conditions. Issues that commonly arise in performing and interpreting nonlinear measurements are discussed, such as power and wave-based representations and the effects of terminating impedance on intermodulation distortion. We demonstrate that the increased confidence provided by a measurement comparison can help to diagnose issues with a device model that was initially derived from DC I/V curves and their derivatives and then compared to RF measurement.

[1]  D.F. Williams,et al.  Transmission line capacitance measurement , 1991, IEEE Microwave and Guided Wave Letters.

[2]  D.F. Williams,et al.  Characteristic impedance determination using propagation constant measurement , 1991, IEEE Microwave and Guided Wave Letters.

[3]  K.A. Remley,et al.  Simplifying and interpreting two-tone measurements , 2004, IEEE Transactions on Microwave Theory and Techniques.

[4]  J. Verspecht.  The return of the sampling frequency convertor , 2003, Conference, 2003. Fall 2003. 62nd ARFTG Microwave Measurements.

[5]  Jose C. Pedro,et al.  A comprehensive explanation of distortion sideband asymmetries , 2002 .

[6]  David K. Walker,et al.  Interlaboratory comparison of noise-parameter measurements on CMOS devices with 0.12 μm gate length , 2005, 2005 66th ARFTG Microwave Measurement Conference (ARFTG).

[7]  A. Barel,et al.  Accurate on wafer measurement of phase and amplitude of the spectral components of incident and scattered voltage waves at the signal ports of a nonlinear microwave device , 1995, Proceedings of 1995 IEEE MTT-S International Microwave Symposium.