ION IMPLANTATION OF SILICON: I. ATOM LOCATION AND LATTICE DISORDER BY MEANS OF 1.0-MeV HELIUM ION SCATTERING
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J. A. Davies | James W. Mayer | J. Mayer | J. Davies | J. Denhartog | L. Eriksson | L. Eriksson | J. Denhartog
[1] E. Bøgh. Rutherford Scattering of Protons in the Surface Layers of a Tungsten Single Crystal , 1967 .
[2] E. Uggerhøj,et al. Experimental investigation of orientation dependence of Rutherford scattering yield in single crystals , 1965 .
[3] R. E. Whan. OXYGEN-DEFECT COMPLEXES IN NEUTRON-IRRADIATED SILICON , 1966 .
[4] M. Bertolotti,et al. EVIDENCE FOR DAMAGE REGIONS IN Si, GaAs, AND InSb SEMICONDUCTORS BOMBARDED WITH HIGH-ENERGY NEUTRONS. , 1967 .
[5] J. O. Mccaldin. Ion beams and solid state physics , 1965 .
[6] J. Davies,et al. An experimental study of the orientation dependence of (p,γ) yields in monocrystalline aluminum , 1965 .
[7] W. Gibson,et al. ANISOTROPIC ENERGY LOSS OF LIGHT PARTICLES OF Mev ENERGIES IN THIN SILICON SINGLE CRYSTALS , 1964 .
[8] H. Matzke,et al. Location of Inert Gas Atoms in KCl, CaF2, and UO2 Crystals by H+ and He2+ , 1967 .